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參數(shù)資料
| 型號： | LET9045S |
| 廠商： | 意法半導體 |
| 英文描述： | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| 中文描述： | 射頻功率晶體管的LDMOS增強技術在塑料包裝 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 292K |
| 代理商： | LET9045S |
1/9
TARGET DATA
February, 27 2003
LET9045S
RF POWER TRANSISTORS
L
dmos
E
nhanced
T
echnology in Plastic Package
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 45 W with 17 dB gain MIN @ 945 MHz /
28V
NEW RF PLASTIC PACKAGE
HIGH GAIN
ESD PROTECTION
AVAILABLE IN TAPE & REEL with TR SUFFIX
DESCRIPTION
The LET9045S is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies up
to 1 GHz. LET9045S boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. LET9045S’s
superior linearity performance makes it an ideal
solution for base station applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
PowerSO-10RF
(straight lead)
ORDER CODE
LET9045S
BRANDING
LET9045S
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
65
V
-0.5 to +15
V
5
A
160
W
165
°
C
-65 to +150
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
0.85
°
C/W
Mounting recommendations are available in
www.st.com/rf/
(look for application note AN1294)
PIN CONNECTION
GATE
SOURCE
DRAIN
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PDF描述 |
|---|---|
| LET9060C | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LET9060S | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET9085 | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LET9130 | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LF120 | Very Low Drop Voltage Regulator with Inhabit(帶禁止的低壓差電壓穩(wěn)壓器) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LET9045TR | 制造商:STMicroelectronics 功能描述: |
| LET9060 | 功能描述:射頻MOSFET電源晶體管 RF PWR Trans LdmoST N-Ch 28V 1GHz ESD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET9060C | 功能描述:射頻MOSFET電源晶體管 RF Power LdmoST 60W 18 dB 945MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET9060F | 功能描述:射頻MOSFET電源晶體管 RF Power LdmoST 60W 18 dB 945MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET9060S | 功能描述:射頻MOSFET電源晶體管 RF PWR Trans LdmoST N-Ch 28V 1GHz ESD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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