參數(shù)資料
型號: LH28F400SUE-NC60
廠商: Sharp Corporation
英文描述: 4M (512K 】 8, 256K 】 16) Flash Memory
中文描述: 4分(為512k】8,256K】16)快閃記憶體
文件頁數(shù): 1/35頁
文件大小: 294K
代理商: LH28F400SUE-NC60
LH28F400SU-NC
1
4M (512K × 8, 256K × 16)
Flash Memory
Figure 1. 56-Pin TSOP Configuration
FEATURES
User-Configurable x8 or x16 Operation
5 V Write/Erase Operation (5 V V
PP
)
– No Requirement for DC/DC Converter
to Write/Erase
60 ns Maximum Access Time
(V
CC
= 5.0 V ± 0.25 V)
80ns Maximum Access Time
(V
CC
= 5.0 V ± 0.5 V)
32 Independently Lockable Blocks (16K)
100,000 Erase Cycles per Block
Automated Byte Write/Block Erase
– Command User Interface
– Status Register
– RY
/BY
Status Output
System Performance Enhancement
– Erase Suspend for Read
– Two-Byte Write
– Full Chip Erase
Data Protection
– Hardware Erase/Write Lockout during
Power Transitions
– Software Erase/Write Lockout
Independently Lockable for Write/Erase
on Each Block (Lock Block and Protect
Set/Reset)
5 μA (Typ.) I
CC
in CMOS Standby
0.2 μA (Typ.) Deep Power-Down
State-of-the-Art 0.45 μm ETOX Flash
Technology
56-Pin, 1.2 mm × 14 mm × 20 mm TSOP
(Type I) Package
48-Pin, 1.2 mm × 12 mm × 18 mm TSOP
(Type I) Package
44-Pin, 600-mil SOP Package
28F400SUT-NC60-1
TOP VIEW
56-PIN TSOP
2
3
4
5
8
9
A
10
A
9
A
13
A
12
A
14
A
15
53
52
51
50
49
48
45
42
6
7
A
11
47
46
GND
DQ
15
/A
-1
DQ
7
A
16
BYTE
DQ
14
DQ
6
DQ
13
11
10
11
12
55
54
13
44
V
CC
V
CC
43
14
15
16
17
18
19
20
39
36
41
40
38
37
DQ
10
DQ
2
DQ
9
DQ
1
DQ
8
DQ
0
RY/BY
NC
V
PP
NC
NC
RP
A
17
A
7
DQ
5
DQ
12
DQ
4
DQ
3
56
1
NC
NC
NC
21
22
23
24
25
26
27
28
A
4
A
3
A
2
A
1
NC
A
5
A
6
34
OE
35
31
33
32
30
29
CE
NC
NC
GND
NC
A
8
NC
WE
A
0
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