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參數(shù)資料
| 型號： | LH28F400SUE-NC60 |
| 廠商： | Sharp Corporation |
| 英文描述： | 4M (512K 】 8, 256K 】 16) Flash Memory |
| 中文描述： | 4分（為512k】8，256K】16）快閃記憶體 |
| 文件頁數(shù)： | 27/35頁 |
| 文件大小： | 294K |
| 代理商： | LH28F400SUE-NC60 |
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4M (512K × 8, 256K × 16) Flash Memory
LH28F400SU-NC
27
AC Characteristics for WE
- Controlled Command Write Operations
1
V
CC
= 5.0 V ± 0.5 V, T
A
= 0°C to +70°C
NOTES:
1. Read timing during write and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested.
4. Write/Erase durations are measured to valid Status Register (CSR) Data.
5. Byte write operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of WE
for all Command Write operations.
SYMBO-
L
PARAMETER
TYP.
V
CC
= 5.0 V ± 0.25 V
V
CC
= 5.0 V ± 0.5 V
UNITS
NOTE
MIN.
MAX.
MIN.
MAX.
t
AVAV
Write Cycle Time
60
70
ns
t
VPWH
V
PP
Set up to WE Going High
100
100
ns
3
t
PHEL
RP
Setup to CE
Going Low
400
430
ns
t
ELWL
CE
Setup to WE Going Low
0
0
ns
t
AVWH
Address Setup to WE Going High
55
60
ns
2, 6
t
DVWH
Data Setup to WE Going High
55
60
ns
2, 6
t
WLWH
WE Pulse Width
55
60
ns
t
WHDX
Data Hold from WE High
0
0
ns
2
t
WHAX
Address Hold from WE High
10
10
ns
2
t
WHEH
CE
Hold from WE High
10
10
ns
t
WHWL
WE Pulse Width High
30
30
ns
t
GHWL
Read Recovery before Write
0
0
ns
t
WHRL
WE High to RY
/BY
Going Low
100
100
ns
t
RHPL
RP
Hold from Valid Status Register
Data and RY
/BY
High
0
0
ns
3
t
PHWL
RP
High Recovery to WE Going Low
1
1
μs
t
WHGL
Write Recovery before Read
60
65
ns
t
QVVL
V
PP
Hold from Valid Status Register
Data and RY
/BY
High
0
0
μs
t
WHQV1
t
WHQV2
Duration of Byte Write Operation
13
4.5
4.5
μs
4, 5
Duration of Block Erase Operation
0.3
0.3
s
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F400SUE-NC80 | 4M (512K 】 8, 256K 】 16) Flash Memory |
| LH28F400SUN-NC60 | 4M (512K 】 8, 256K 】 16) Flash Memory |
| LH28F400SUN-NC80 | 4M (512K 】 8, 256K 】 16) Flash Memory |
| LH28F400SUT-NC60 | 4M (512K 】 8, 256K 】 16) Flash Memory |
| LH28F400SUT-NC80 | 4M (512K 】 8, 256K 】 16) Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F400SUE-NC80 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory |
| LH28F400SUHE-NC80 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory |
| LH28F400SUHN | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M Flash Memory |
| LH28F400SUHN-NC80 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M Flash Memory |
| LH28F400SUHT | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4Mbit(512Kbit x 8,256 Kbit x 16) 5V Single Voltage Flash Memory |
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