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參數(shù)資料
| 型號： | LH28F640SP |
| 廠商： | Sharp Corporation |
| 英文描述： | 64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory |
| 中文描述： | 64兆比特（4Mbitx16/8Mbitx8）頁閃存 |
| 文件頁數(shù)： | 29/45頁 |
| 文件大小： | 1041K |
| 代理商： | LH28F640SP |
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LHF64P01 27
Rev. 0.06
1.2.7 Block Erase, (Page Buffer) Program and Block Lock Configuration Performance
(3)
NOTES:
1. Typical values measured at V
CC
=3.0V, V
PEN
=3.0V and T
A
=+25
°
C. Assumes corresponding lock bits
are not set. Subject to change based on device characterization.
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
4. A latency time is required from writing suspend command (the first edge of CE
0
, CE
1
or CE
2
that disables
the device or the rising edge of WE#) until SR.7 going "1" or STS going High Z.
5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter
than t
ERES
and its sequence is repeated, the block erase operation may not be finished.
6. These values are valid when the page buffer is full, and the start address is aligned on a 16-word/ 32-byte boundary.
7. Program time per byte (t
WHQV1
/ t
EHQV1
) is 12.5
μ
s/byte (typical).
Program time per word (t
WHQV2
/ t
EHQV2
) is 25.0
μ
s/word (typical).
V
CC
=2.7V-3.6V, T
A
=-40
°
C to +85
°
C
Symbol
Parameter
Notes
V
PEN
=V
PENH
Unit
Min.
Typ.
(1)
Max.
Page Buffer Program Time
(Time to Program 16 words/ 32 bytes)
2, 6,
7
400
1200
μ
s
t
WHQV3
/
t
EHQV3
Program Time
2
210
630
μ
s
Block Program Time
(Using Page Buffer Program Command)
2
1.6
4.8
s
t
WHQV4
/
t
EHQV4
t
WHQV5
/
t
EHQV5
t
WHQV6
/
t
EHQV6
t
WHRH1
/
t
EHRH1
t
WHRH2
/
t
EHRH2
Block Erase Time
2
1
5
s
Set Block Lock Bit Time
2
64
85
μ
s
Clear Block Lock Bits Time
2
0.5
0.7
s
(Page Buffer) Program Suspend
Latency Time to Read
4
25
90
μ
s
Block Erase Suspend
Latency Time to Read
4
26
40
μ
s
t
ERES
Latency Time from Block Erase
Resume Command to Block
Erase Suspend Command
5
600
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F640SPHT-PTL12 | 64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F640SPHT-PL12A | 功能描述:閃存 64MB X8/X16 3V DUAL SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| LH28F640SPHT-PTL12 | 功能描述:IC FLASH 64MBIT 120NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| LH28F640SPHT-PTLZ8 | 功能描述:閃存 64M (x8/x16) 3V Dual Supply RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| LH28F800 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BG | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memory |
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