參數(shù)資料
型號： LH28F640SP
廠商： Sharp Corporation
英文描述： 64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory
中文描述： 64兆比特（4Mbitx16/8Mbitx8）頁閃存
文件頁數(shù)： 4/45頁
文件大?。?/td> 1041K
代理商： LH28F640SP
LHF64P01 2
LH28F640SPHT-PTL12
64Mbit (4Mbit
×
16/8Mbit
×
8)
Page Mode Flash MEMORY
64-Mbit Density
Bit Organization
×
8/
×
16
High Performance Page Mode Reads
for Memory Array
120/25ns 4-Word/ 8-Byte Page Mode
V
CC
=2.7V-3.6V Operation
V
CCQ
for Input/Output Power Supply Isolation
Automatic Power Savings Mode reduces I
CCR
in Static Mode
OTP (One Time Program) Block
4-Word/ 8-Byte Factory-Programmed Area
3963-Word/ 7926-Byte User-Programmable Area
High Performance Program with Page Buffer
16-Word/ 32-Byte Page Buffer
Page Buffer Program Time 12.5
μ
s/byte (Typ.)
Operating Temperature -40
°
C to +85
°
C
Symmetrically-Blocked Architecture
Sixty-four 64-KWord/ 128-KByte Blocks
Enhanced Data Protection Features
Individual Block Lock
Absolute Protection with V
PEN
≤
V
PENLK
Block Erase, (Page Buffer) Program Lockout during
Power Transitions
Automated Erase/Program Algorithms
Program Time 210
μ
s (Typ.)
Block Erase Time 1s (Typ.)
Cross-Compatible Command Support
Basic Command Set
Common Flash Interface (CFI)
Extended Cycling Capability
Minimum 100,000 Block Erase Cycles
56-Lead TSOP (Normal Bend)
CMOS Process (P-type silicon substrate)
ETOX
TM*
Flash Technology
Not designed or rated as radiation hardened
The product, which is Page Mode Flash memory, is a high density, low cost, nonvolatile read/write storage solution for a
wide range of applications. The product can operate at V
CC
=2.7V-3.6V and V
PEN
=2.7V-3.6V
The product supports high performance page mode. It allows code execution directly from Flash, thus eliminating time
consuming wait states.
Fast program capability is provided through the use of high speed Page Buffer Program.
The block locking scheme is available for memory array and this scheme provides maximum flexibility for safe nonvolatile
code and data storage.
OTP (One Time Program) block provides an area to store security code and to protect its code.
* ETOX is a trademark of Intel Corporation.
Rev. 0.06
相關(guān)PDF資料
PDF描述
LH28F640SPHT-PTL12 64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory
LH28F800BVE-BV85 8M (1M x 8/512K x 16)Smart5 Flash Memory(8M (1M x 8/512K x 16)Smart5技術(shù)閃速存儲器)
LH28F800BVE-TV85 8M (1M x 8/512K x 16)Smart5 Flash Memory(8M (1M x 8/512K x 16)Smart5技術(shù)閃速存儲器)
LH28F800BVHE-BTL90 8M (1M x 8/512K x 16)Smart3 Flash Memory(8M (1M x 8/512K x 16)Smart3技術(shù)閃速存儲器)
LH28F800BVHE-TTL90 8M (1M x 8/512K x 16)Smart3 Flash Memory(8M (1M x 8/512K x 16)Smart3技術(shù)閃速存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F640SPHT-PL12A 功能描述:閃存 64MB X8/X16 3V DUAL SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
LH28F640SPHT-PTL12 功能描述:IC FLASH 64MBIT 120NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR)
LH28F640SPHT-PTLZ8 功能描述:閃存 64M (x8/x16) 3V Dual Supply RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
LH28F800 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800BG 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memory
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