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參數(shù)資料
| 型號(hào)： | LH5P832 |
| 廠商： | Sharp Corporation |
| 英文描述： | CMOS 256K (32K x 8) Pseudo-Static RAM |
| 中文描述： | 的CMOS 256K（32K的× 8）偽靜態(tài)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 95K |
| 代理商： | LH5P832 |
AC CHARACTERISTICS
READ AND WRITE CYCLES
1,2
(V
CC
= 5.0 V
±
10%, T
A
= 0 to 70
°
C)
PARAMETER
SYMBOL
160 ns
190 ns
UNIT
NOTE
MIN.
MAX.
MIN.
MAX.
Random read, write cycle time
Read modify write cycle time
CE pulse width
CE precharge time
Address setup time
Address hold time
Read command hold time
Read command setup time
CE access time
OE access time
CE to output in Low-Z
OE to output in Low-Z
Output enable from end of write
Chip disable to output in High-Z
Output disable to output in High-Z
Write enable to output in High-Z
OE setup time
OE hold time
OE lead time
Write command pulse width
Write command setup time
Write command hold time
Data setup time from write
Data setup time from CE
Data hold time from write
Data hold time from CE
Transition time (rise and fall)
Refresh time interval
t
RC
t
RMW
t
CE
t
P
t
AS
t
AH
t
RCH
t
RCS
t
CEA
t
OEA
t
CLZ
t
OLZ
t
WLZ
t
CHZ
t
OHZ
t
WHZ
t
OES
t
OEH
t
OEL
t
WCP
t
WCS
t
WCH
t
DSW
t
DSC
t
DHW
t
DHC
t
T
t
REF
160
225
100
50
0
20
0
0
190
280
120
60
0
30
0
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
10,000
10,000
100
40
120
50
3
3
10
0
0
0
0
0
10
0
10
60
60
60
40
40
0
0
3
10
0
0
0
0
0
10
0
10
85
85
85
50
50
0
0
3
30
30
30
35
35
35
2
2
2
35
4
35
4
REFRESH CYCLE
Auto refresh cycle time
Refresh delay time from CE
Refresh pulse width (Auto refresh)
Refresh precharge time
(Auto refresh)
CE delay time from refresh active
(Auto refresh)
Refresh pulse width (Self refresh)
CE delay time from refresh
precharge (Self refresh)
t
FC
t
RFD
t
FAP
160
50
60
190
60
80
ns
ns
ns
8,000
8,000
t
FP
30
30
ns
t
FCE
190
225
ns
t
FAS
8,000
8,000
ns
t
FRS
190
225
ns
NOTES:
1.
At least 200
μ
s of pause time after power on should be given for
proper device operation.
CE and OE/RFSH must be fixed at V
IH
for 200
μ
s from the V
DD
reached to the specified voltage level
and followed by at least 8 dummy cycles.
2.
3.
AC characteristics are measured at t
T
= 5 ns.
Measured with a load circuit equivalent to 1TTL loads and
100 pF.
LH5P832
CMOS 256K (32K
×
8) Pseudo-Static RAM
4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH5P832-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
| LH5P832-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
| LH5P832D-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
| LH5P832D-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
| LH5P832N-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
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