參數(shù)資料
型號(hào): LH5PV16256
廠商: Sharp Corporation
英文描述: CMOS 4M (256K x 16) Pseudo-Static RAM
中文描述: 的CMOS 4分(256K × 16),偽靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù): 1/14頁(yè)
文件大?。?/td> 116K
代理商: LH5PV16256
LH5PV16256
CMOS 4M (256K
×
16) Pseudo-Static RAM
FEATURES
262,144 words
×
16 bit organization
Power supply: +3.0
±
0.15 V
Access time: 120 ns (MAX.)
Cycle time: 190 ns (MIN.)
Power consumption (MAX.):
126 mW (Operating)
94.5
μ
W (Standby = CMOS input level)
220.5
μ
W
(Self-refresh = CMOS input level)
LVTTL compatible I/O
Available for address refresh,
auto-refresh, and self-refresh modes
2,048 refresh cycles/32 ms
Address non-multiple
Available for byte write mode using UWE
and LWE pins
Package:
44-pin, TSOP (Type II)
Process: Silicon-gate CMOS
Operating temperature: 0 - 70
°
C
Not designed or rated as radiation
hardened
DESCRIPTION
The LH5PV16256 is a 4M bit Pseudo-Static RAM with
a 262,144 words
×
16 bit organization.
PIN CONNECTIONS
2
3
4
5
6
7
9
10
8
UWE
11
1
44
43
42
41
38
37
40
39
36
35
GND
I/O
15
44-PIN TSOP (Type II)
12
15
13
14
33
32
34
31
30
29
LWE
A
1
A
2
A
0
A
3
A
4
A
5
A
6
V
CC
V
CC
RFSH
I/O
7
I/O
6
I/O
5
I/O
4
I/O
13
I/O
12
I/O
14
I/O
11
I/O
10
I/O
9
I/O
8
5PV16256S-1
A
17
CS
A
16
A
15
A
14
A
13
A
12
17
18
19
20
21
22
A
11
A
10
16
28
27
26
23
25
24
I/O
3
A
9
A
8
CE
I/O
1
I/O
0
I/O
2
OE
GND
A
7
TOP VIEW
Figure 1. Pin Connections
1
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