參數(shù)資料
型號: LIS202DL
廠商: 意法半導體
英文描述: MEMS motion sensor 2-axis - 【2g/【8g smart digital output “piccolo” accelerometer
中文描述: MEMS運動傳感器2軸- 【2克/【八克智能數(shù)字輸出的“小報”加速度
文件頁數(shù): 6/36頁
文件大小: 249K
代理商: LIS202DL
Mechanical and electrical specifications
LIS202DL
6/36
2
Mechanical and electrical specifications
2.1
Mechanical characteristics
(All the parameters are specified @ Vdd=2.5V, T = 25°C unless otherwise noted)
Table 3.
Mechanical characteristics
(1)
Symbol
Parameter
Test conditions
Min.
Typ.
(2)
Max.
Unit
FS
Measurement range
(3)
FS bit set to 0
±
2.0
±
2.3
g
FS bit set to 1
±
8.0
±
9.2
So
Sensitivity
FS bit set to 0
16.2
18
19.8
mg/digit
FS bit set to 1
64.8
72
79.2
TCSO
Sensitivity change vs
temperature
FS bit set to 0
±
0.01
%/°C
TyOff
Typical zero-g level offset
accuracy
(4),(5)
FS bit set to 0
±40
mg
FS bit set to 1
±
60
mg
TCOff
Zero-g level change vs
temperature
Max delta from 25°C
±
0.5
mg/°C
Vst
Self test output
change
(6),(7),(8)
FS bit set to 0
STP bit used
X axis
Vdd=2.16V to 3.6V
-32
-3
LSb
FS bit set to 0
STP bit used
Y axis
Vdd=2.16V to 3.6V
3
32
LSb
BW
System bandwidth
(9)
ODR/2
Hz
Top
Operating temperature range
-40
+85
°C
Wh
Product weight
30
mgram
1.
The product is factory calibrated at 2.5V. The device can be used from 2.16V to 3.6V
2.
Typical specifications are not guaranteed
3.
Verified by wafer level test and measurement of initial offset and sensitivity
4.
Typical zero-g level offset value after MSL3 preconditioning
5.
Offset can be eliminated by enabling the built-in high pass filter
6.
If STM bit is used values change in sign for all axes
7.
Self Test output changes with the power supply. Self test “output change” is defined as OUTPUT[LSb]
(Self-test bit on ctrl_reg1=1)
-OUTPUT[LSb]
(Self-test bit on ctrl_reg1=0)
. 1LSb=4.6g/256 at 8bit representation,
±
2.3g Full-Scale
8.
Output data reach 99% of final value after 3/ODR when enabling Self-Test mode due to device filtering
9.
ODR is output data rate. Refer to table 3 for specifications
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