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參數(shù)資料
| 型號： | LM2324 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | PLLatinum⑩ 2.0 GHz Frequency Synthesizer for RF Personal Communications |
| 中文描述： | PLLatinum⑩射頻個人通訊2.0 GHz的頻率合成器 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 157K |
| 代理商： | LM2324 |
Charge Pump Current Specification Definitions
DS101030-4
I1 = CP sink current at VCP
o
= V
P
V
I2 = CP sink current at VCP
o
= V
P
/2
I3 = CP sink current at VCP
o
=
V
I4 = CP source current at VCP
o
= V
P
V
I5 = CP source current at VCP
o
= V
P
/2
I6 = CP source current at VCP
=
V
V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to V
P
and ground. Typical values are between 0.5V and 1.0V.
1. ICP
o
vs. VCP
o
= Charge Pump Output Current magnitude variation vs. Voltage =
[
1
2
*
{|I1| |I3|}]/[
1
2
*
{|I1| + |I3|}]
*
100%
and
[
1
2
*
{|I4| |I6|}]/[
1
2
*
{|I4| + |I6|}]
*
100%
2. ICP
o-sink
vs. ICP
o-source
= Charge Pump Output Current Sink vs. Source Mismatch =
[|I2| |I5|]/[
1
2
*
{|I2| + |I5|}]
*
100%
3. ICP
o
vs. T = Charge Pump Output Current magnitude variation vs. Temperature =
[|I2
@
temp| |I2
@
25C|]/|I2
@
25C|
*
100%
and
[|I5
@
temp| |I5
@
25C|]/|I5
@
25C|
*
100%
L
www.national.com
4
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