參數(shù)資料
型號: LM2706
廠商: National Semiconductor Corporation
元件分類: DC/DC變換器
英文描述: Miniature, Variable, Step-Down DC-DC Converter with Bypass for RF Power Amplifiers
中文描述: 微型,變,降壓型DC - DC與RF功率放大器繞道轉(zhuǎn)換器
文件頁數(shù): 4/15頁
文件大?。?/td> 451K
代理商: LM2706
Electrical Characteristics
(Continued)
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but device specifications may not be guaranteed. For guaranteed specifications and associated test conditions, see the Min and Max limits and Conditions
in the Electrical Characteristics table. Electrical characteristics table limits are guaranteed by production testing, design or correlation using standard Statistical
Quality Control methods. Typical (typ) specifications are mean or average values at 25C and are not guaranteed.
Note 2:
Thermal shutdown will occur if the junction temperature exceeds 150C.
Note 3:
Thermal resistance specified with 1.2" x 1.2" (2 layer 1.5 oz. Cu.) board.
Note 4:
The LM2706 is designed for mobile phone applications where turn-on after power-up is controlled by the system controller and where requirements for a
small package size overrule increased die size for internal Under Voltage Lock-Out (UVLO) circuitry. Thus, it should be kept in shutdown by holding the EN pin low
until the input voltage exceeds 2.7V.
Note 5:
Over-Voltage protection (OVP) hysteresis is the voltage above the nominal V
OUT
where the OVP comparator turns off the PFET switch while in PWM mode.
Note 6:
V
is compared to the programmed output voltage (V
, PROG). When V
–V
, PROG falls below V
BYPASS
for longer than T
BYPASS
the bypass FET
turns on and the switching FETS turn off. This is called the bypass mode. Bypass mode is exited when V
IN
–V
OUT
BYPASS
+ for longer than
T
BYPASS
, and PWM mode returns.
Note 7:
Shutdown current includes the leakage currents of the PFET and Bypass FET.
Note 8:
Current limit is built-in, fixed, and not adjustable. The current limit tests are done by using DC measurement methods.
System Characteristics
nent values in the typical application circuit are used.
These parameters are not guaranteed by production testing.
The following specifications are based on design limits and assume that the compo-
Symbol
Tresponse
Parameter
Conditions
Min
Typ
Max
Units
Time for V
OUT
to rise from 1.5V to
3.25V (PWM Mode)
Turn on time in pwm mode
V
IN
= 4.2V,C
OUT
= 4.7 μF,
R
LOAD
= 15
EN = L to H,
V
IN
=3.6V,V
OUT
=3.25V,
C
OUT
= 4.7 μF, R
LOAD
=10
V
CON
=1V, Test freq = 100kHz
(Note 6)
V
IN
- V
OUT
= 0.25V
C
OUT
= 4.7μF, R
LOAD
= 15
25
30
μs
Ton_pwm
600
900
μs
Z
CON
T_bypass
Ton_bypass Bypass FET turn on time
V
CON
input capacitance
Auto bypass detect delay
15
12
pF
μs
8
10
30
μs
L
www.national.com
4
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