參數(shù)資料
型號(hào): LM3046
廠商: National Semiconductor Corporation
英文描述: Transistor Array
中文描述: 晶體管陣列
文件頁(yè)數(shù): 1/6頁(yè)
文件大小: 197K
代理商: LM3046
LM3046
Transistor Array
General Description
The LM3046 consists of five general purpose silicon NPN
transistors on a common monolithic substrate. Two of the
transistors
are
internally
differentially-connected pair. The transistors are well suited
to a wide variety of applications in low power system in the
DC through VHF range. They may be used as discrete tran-
sistors in conventional circuits however, in addition, they pro-
vide the very significant inherent integrated circuit advan-
tages of close electrical and thermal matching. The LM3046
is supplied in a 14-lead molded dual-in-line package.
connected
to
form
a
Features
n
Two matched pairs of transistors
V
matched
±
5 mV
Input offset current 2 μA max at I
C
= 1 mA
n
Five general purpose monolithic transistors
n
Operation from DC to 120 MHz
n
Wide operating current range
n
Low noise figure:
3.2 dB typ at 1 kHz
Applications
n
General use in all types of signal processing systems
operating anywhere in the frequency range from DC to
VHF
n
Custom designed differential amplifiers
n
Temperature compensated amplifiers
Schematic and Connection Diagram
Small Outline Package
DS007950-1
Top View
Order Number LM3046M
See NS Package Number M14A
July 1999
L
1999 National Semiconductor Corporation
DS007950
www.national.com
相關(guān)PDF資料
PDF描述
LM3046N LM3045/LM3046/LM3086 Transistor Arrays
LM3046M LM3045/LM3046/LM3086 Transistor Arrays
LM305A Voltage Regulators
LM305H Voltage Regulators
LM305AH CAP 10V 1000UF SOLID ELECT AXIAL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LM3046M 功能描述:達(dá)林頓晶體管 Transistor Array RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
LM3046M/NOPB 功能描述:兩極晶體管 - BJT TRANSISTOR ARRAY RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
LM3046MX 功能描述:達(dá)林頓晶體管 Transistor Array RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
LM3046MX/NOPB 功能描述:達(dá)林頓晶體管 Transistor Array RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
LM3046N 制造商: 功能描述: 制造商:undefined 功能描述: 制造商:STMicroelectronics 功能描述:Bipolar Junction Transistor, Array, Independent, DIP 制造商:Texas Instruments 功能描述:Bipolar Junction Transistor, Array, Independent, DIP