參數(shù)資料
型號(hào)： LM3046
廠商： National Semiconductor Corporation
英文描述： Transistor Array
中文描述： 晶體管陣列
文件頁(yè)數(shù)： 3/6頁(yè)
文件大小： 197K
代理商： LM3046
Electrical Characteristics
(Continued)
(T
A
= 25C unless otherwise specified)
Parameter
Conditions
Limits
Typ
1.1
Units
Min
Max
Temperature Coefficient of
Input Offset Voltage
V
CE
= 3V, I
C
= 1 mA
μV/C
Note 1:
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2:
The collector of each transistor is isolated from the substrate by an integral diode. The substrate (terminal 13) must be connected to the most negative point
in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
Electrical Characteristics
Parameter
Conditions
Min
Typ
3.25
Max
Units
dB
Low Frequency Noise Figure (NF)
f = 1 kHz, V
CE
= 3V,
I
C
= 100 μA, R
S
= 1 k
LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS
Forward Current Transfer Ratio (h
fe
)
f = 1 kHz, V
CE
= 3V,
I
C
= 1 mA
110
Short Circuit Input Impednace (h
ie
)
Open Circuit Output Impedance (h
oe
)
Open Circuit Reverse Voltage Transfer Ratio
(h
re
)
ADMITTANCE CHARACTERISTICS
Forward Transfer Admittance (Y
fe
)
Input Admittance (Y
ie
)
Output Admittance (Y
oe
)
Reverse Transfer Admittance (Y
re
)
Gain Bandwidth Product (f
T
)
Emitter to Base Capacitance (C
EB
)
Collector to Base Capacitance (C
CB
)
Collector to Substrate Capacitance (C
CI
)
3.5
15.6
k
μmho
1.8 x 10
4
f = 1 MHz, V
CE
= 3V,
I
C
= 1 mA
31 j 1.5
0.3+J 0.04
0.001+j 0.03
See Curve
550
0.6
0.58
2.8
V
CE
= 3V, I
C
= 3 mA
V
EB
= 3V, I
E
= 0
V
CB
= 3V, I
C
= 0
V
CS
= 3V, I
C
= 0
300
pF
pF
pF
Typical Performance Characteristics
Typical Collector To Base
Cutoff Current vs Ambient
Temperature for Each
Transistor
DS007950-8
Typical Collector To Emitter
Cutoff Current vs Ambient
Temperature for Each
Transistor
DS007950-9
Typical Static Forward
Current-Transfer Ratio and
Beta Ratio for Transistors Q
1
and Q
2
vs Emitter Current
DS007950-10
www.national.com
3
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LM3046M 功能描述:達(dá)林頓晶體管 Transistor Array RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
LM3046M/NOPB 功能描述:兩極晶體管 - BJT TRANSISTOR ARRAY RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
LM3046MX 功能描述:達(dá)林頓晶體管 Transistor Array RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
LM3046MX/NOPB 功能描述:達(dá)林頓晶體管 Transistor Array RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
LM3046N 制造商: 功能描述: 制造商:undefined 功能描述: 制造商:STMicroelectronics 功能描述:Bipolar Junction Transistor, Array, Independent, DIP 制造商:Texas Instruments 功能描述:Bipolar Junction Transistor, Array, Independent, DIP
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