參數(shù)資料
型號(hào)： LM3200
廠商： National Semiconductor Corporation
元件分類： DC/DC變換器
英文描述： Miniature, Adjustable, Step-Down DC-DC Converter with Bypass Mode for RF Power Amplifiers
中文描述： 微型，可調(diào)，降壓的DC - DC轉(zhuǎn)換器旁路模式射頻功率放大器
文件頁(yè)數(shù)： 3/15頁(yè)
文件大小： 885K
代理商： LM3200
Absolute Maximum Ratings
(Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
DD
, PV
IN
to SGND
PGND to SGND
EN, FB, BYP, V
CON
0.2V to +6.0V
0.2V to +0.2V
(SGND 0.2V)
to (V
DD
+0.2V)
w/6.0V max
(PGND 0.2V)
to (PV
IN
+0.2V)
w/6.0V max
0.2V to +0.2V
SW, BYPOUT
PV
IN
to V
DD
Continuous Power Dissipation
(Note 3)
Junction Temperature (T
J-MAX)
Storage Temperature Range
Maximum Lead Temperature
(Soldering, 10 sec)
Internally Limited
+150C
65C to +150C
+260C
ESD Rating (Note 4)
Human Body Model: All other pins
Human Body Model: PV
IN
pin
Machine Model: All pins
2.0 kV
1.0 kV
200V
Operating Ratings
(Notes 1, 2)
Input Voltage Range
Recommended Load Current
PWM Mode
Bypass Mode
Junction Temperature (T
J
) Range
Ambient Temperature (T
A
) Range
(Note 5)
2.7V to 5.5V
0 mA to 300 mA
0 mA to 500 mA
25C to +125C
25C to +85C
Thermal Properties
Junction-to-Ambient Thermal
Resistance (
θ
JA
), TLP10 Package (Note 6)
100C/W
Electrical Characteristics
(Notes 2, 7)
face
type apply over the full operating ambient temperature range (25C
≤
T
A
= T
J
≤
+85C). Unless otherwise noted, speci-
fications apply to the LM3200 with: PV
IN
= V
DD
= EN = 3.6V, BYP = 0V.
Limits in standard typeface are for T
A
= T
J
= 25C. Limits in
bold-
Symbol
V
IN
Parameter
Conditions
Min
Typ
Max
Units
Input Voltage Range
(Note 8)
Feedback Voltage at
Minimum Setting
Feedback Voltage at
Maximum Setting
Over-Voltage
Protection Threshold
Auto Bypass Detection
Negative Threshold
Auto Bypass Detection
Positive Threshold
Shutdown Supply
Current (Note 11)
DC Bias Current into
V
DD
Pin-Pin Resistance for
PFET
Pin-Pin Resistance for
N-FET
Pin-Pin Resistance for
Bypass FET
Switch Current Limit
Bypass FET Current
Limit
Internal Oscillator
Frequency
Logic High Input
Threshold for EN, BYP
PV
IN
= V
DD
= V
IN
2.7
5.5
V
V
FB, MIN
V
CON
= 0.267V, V
IN
= 3.6V
0.75
0.800
0.85
V
V
FB, MAX
V
CON
= 1.20V, V
IN
= 4.2V
3.528
3.600
3.672
V
OVP
(Note 9)
330
400
mV
V
BYPASS
(Note 10)
160
250
320
mV
V
BYPASS+
(Note 10)
350
450
540
mV
I
SHDN
EN = SW = BYPOUT = V
CON
= FB = 0V
0.1
3
μA
I
Q_PWM
I
Q_BYP
R
DSON (P)
V
CON
= 0.267V, FB = 2V, No-Load
BYP = 3.6V, V
CON
= 0V, No-Load
I
SW
= 500mA
720
720
850
850
μA
μA
320
450
m
R
DSON (N)
I
SW
= - 200mA
310
450
m
R
DSON
(BYP)
I
LIM-PFET
I
LIM-BYP
I
BYPOUT
= 500mA
85
120
m
(Note 12)
(Note 13)
700
820
940
mA
800
1000
1200
mA
F
OSC
1.7
2
2.2
MHz
V
IH
1.20
V
L
www.national.com
3
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