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參數(shù)資料
| 型號： | LM32 |
| 廠商： | National Semiconductor Corporation |
| 元件分類： | 溫度/濕度傳感器 |
| 英文描述： | Dual Thermal Diode Temperature Sensor with SensorPath Bus |
| 中文描述： | 雙熱二極管溫度傳感器SensorPath總線 |
| 文件頁數(shù)： | 4/24頁 |
| 文件大?。?/td> | 340K |
| 代理商： | LM32 |
Absolute Maximum Ratings
(Notes 2, 1)
Supply Voltage (V
+
)
Voltage at Any Digital Input or
Output Pin
Voltage on D1+ and D2+
Current on D1- and D2-
Input Current per Pin(Note 3)
Package Input Current (Note 3)
Package Power Dissipation
Output Sink Current
ESD Susceptibility (Note 5)
Human Body Model
Machine Model
0.5 V to 6.0 V
0.5 V to 6.0 V
0.5 V to (V+ + 0.05 V)
±
1 mA
±
5 mA
±
30 mA
(Note 4)
10 mA
2500 V
250 V
Storage Temperature
Soldering process must comply with National’s reflow
temperature profile specifications. Refer to
www.national.com/packaging/.
(Note 6)
65C to +150C
Operating Ratings
(Notes 1, 2)
Temperature Range for Electrical Characteristics
LM32CIMT (T
MIN
≤
T
A
≤
T
MAX
)
Operating Temperature Range
Remote Diode Temperature (T
D
)
Range
Supply Voltage Range (V+)
0C
≤
T
A
≤
+85C
0C
≤
T
A
≤
+125C
-5C
≤
T
D
≤
+140 C
+3.0 V to +3.6 V
DC Electrical Characteristics
The following specifications apply for V+ = +3.0 V
to +3.6 V
, and all analog source impedance R
= 50
unless other-
wise specified in the conditions.
Boldface limits apply for LM32CIMT T
= T
= T
=0C to T
=85C;
all other limits
T
= +25C. T
is the ambient temperature of the LM32; T
J
is the junction temperature of the LM32; T
D
is the junction tem-
perature of the remote thermal diode.
POWER SUPPLY CHARACTERISTICS
Symbol
Parameter
Conditions
Typical
(Note 7)
Limits
(Note 8)
3.0
3.6
Units
(Limit)
V (min)
V (max)
V+
Power Supply Voltage
3.3
I+
Shutdown
Shutdown Power Supply Current
SensorPath Bus Inactive
(Note 9)
SensorPath Bus Inactive; all
sensors enabled;
t
CONV
=182 ms; (Note 9)
SensorPath Bus Inactive
(Note 9)
260
420
μA (max)
I+
Average
Average Power Supply Current
900
μA (max)
I+
Peak
Peak Power Supply Current
3.3
mA (max)
Power-On Reset Threshold Voltage
1.6
2.8
V (min)
V (max)
TEMPERATURE-TO-DIGITAL CONVERTER CHARACTERISTICS
Parameter
Conditions
Typical
(Note 7)
Limits
(Note 8)
Units
(Limits)
Temperature Accuracy Using the Remote Thermal
Diode, see (Note 11) for Thermal Diode Processor
Type.
T
J
= 0C to
+85C
T
J
= 0C to
+85C
T
J
= 0C to
+85C
T
J
= 0C to +85C (Note 10)
T
D
= +25C
±
1
±
2.5
C (max)
T
D
= 0C to
+100C
T
D
= +100C to
+125C
±
3
C (max)
±
4
C (max)
Temperature Accuracy Using the Local Diode
Remote Diode and Local Temperature Resolution
±
1
10
0.5
0.7
188
11.75
±
3
C (max)
Bits
C
V
μA (max)
μA
D Source Voltage
Diode Source Current
(V
D+
V
D
) = +0.65 V; High Current
Low Current
280
Diode Source Current High Current to Low Current
Ratio
16
L
www.national.com
4
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