參數(shù)資料
型號： LM3622MX-8.4
廠商： NATIONAL SEMICONDUCTOR CORP
元件分類： 穩(wěn)壓器
英文描述： Lithium-Ion Battery Charger Controller
中文描述： BATTERY CHARGE CONTROLLER, PDSO8
封裝： SOIC-8
文件頁數(shù)： 4/9頁
文件大?。?/td> 171K
代理商： LM3622MX-8.4
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC
)
LV
EXT (Note 2)
LV
SEL
LV
ENB
ESD Susceptibility (Note 3)
Storage Temperature
Lead Temp. Soldering
Vapor Phase (60 sec.)
Infrared (15 sec.)
-0.3 to 24V
-0.3 to 24V
-0.3 to 24V
-0.3 to 24V
-0.3 to 24V
2500V
40C to +125C
215C
220C
Power Dissipation (T
A
= 25C)
(Note 4)
Max. Package Dissipation
350mW
Operating Ratings
(Note 1)
Supply Voltage (V
CC
)
Ambient Temperature Range
Junction Temperature Range
Thermal Resistance,
θ
JA
SOIC-8
4.5V to 24V
20C to 70C
20C to 85C
170C/W
Electrical Characteristics
LM3622-XX
Unless otherwise specified V
= 5V/Cell T
=T
= 25C. Limits with standard typeface apply for T
J
= 25C, and limits in
bold-
face type
apply over the indicated temperature range.
Symbol
Parameter
Conditions
V
CC
Operating power supply range
I
CC
Quiescent Current
Regulation Voltage
LM3622A-4.1
LM3622A-8.2
LM3622A-4.2
LM3622A-8.4
LM3622-4.1
LM3622-8.2
LM3622-4.2
LM3622-8.4
Long Term Stability
(Note 6)
V
CS
Current limit threshold at CS pin
V
CEL
= 4V for LM3622-4.X
V
CEL
= 8V for LM3622-8.X
I
CEL
Current in CEL pin
V
CC
Supply connected
V
CC
Supply Open
LVth
Low voltage detect threshold
(between pins CS and GND)
LV
ENB
= 0V and LV
SEL
= V
CC
I
EXT
EXT pin output sink current
V
EXT
= 4V for LM3622-4.X
V
EXT
= 8V for LM3622-8.X
I
IN1
LV
SEL
input current
LV
SEL
= 5V, LM3622-4.X
LV
SEL
= 10V, LM3622-8.X
I
IN2
LV
ENB
input current
LV
ENB
= 5V, LM3622-4.X
LV
ENB
= 10V, LM3622-8.X
I
LV
LV pin leakage current
LV = 5V/Cell
V
LV
LV pin saturation voltage
I
SINK
= 1mA
T
J
= 20C to 85C
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is in-
tended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Note 2:
V
EXT
is not allowed to exceed (V
CC
+ 0.3V) or damage to the device may occur.
Note 3:
Rating is for the human body model, a 100 pF capacitor discharged through a 1.5k
resistor into each pin.
Note 4:
The maximum power dissipation must be de-rated at elevated temperatures and is limited by T
(maximum junction temperature),
θ
JA
(junction-to-ambient thermal resistance) and T
(ambient temperature). The maximum power dissipation at any temperature is: PDiss
MAX
= (T
JMAX
T
A
) /
θ
JA
up
to the value listed in the Absolute Maximum Ratings.
Note 5:
Limits reflect initial accuracy.
Note 6:
T
J
= 85C, 1000 hours. Activation energy of 0.78eV used.
Min
4.5
Typ
Max
24.0
Units
V
μA
210
V
CEL
T
J
= 0C to +70C
V
CC
= 4.5V/cell (Note 5)
4.070
8.140
4.170
8.340
4.050
8.100
4.150
8.300
4.100
8.200
4.200
8.400
4.100
8.200
4.200
8.400
0.02
100
4.130
8.260
4.230
8.460
4.150
8.300
4.250
8.500
V
V
V
V
V
V
V
%
mV
90
110
25
200
2.15
2.70
25
μA
nA
LV
ENB
= 0V and LV
SEL
= 0V
2.00
2.55
15
2.30
2.85
V/Cell
V/Cell
mA
20
50
20
50
μA
μA
250
0.40
nA
V
0.25
L
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