參數(shù)資料
型號(hào)： LM3641
廠(chǎng)商： National Semiconductor Corporation
英文描述： Lithium-Ion Battery Pack Protection Circuit
中文描述： 鋰離子電池保護(hù)電路
文件頁(yè)數(shù)： 12/17頁(yè)
文件大?。?/td> 327K
代理商： LM3641
Component Selection
(Continued)
tance of the MOSFETs ultimately determines the peak cur-
rent in short circuit and therefore is a useful parameter for
determining if the MOSFETs are compatible for the applica-
tion. The proper pack design dictates that the MOSFETs are
capable of withstanding repeated short circuit events over
the life of the pack without developing opens or shorts be-
tween the drain and source.
M3
This P-MOSFET is necessary for isolating the IC from invalid
chargers. Its drain to source voltage breakdown should ex-
ceed that of M1 and M2. The on conductance and g
can be
very poor and serve the purpose of driving the power MOS-
FETs M1 and M2 as the steady state drive is only V
CELL
/R2.
The operating V
≤
V
. The V
of M3 has signifi-
cance in that it determines what minimum value of cell volt-
age is allowed for charging. When the cell voltage is lower
than the V
required to conduct V
/R2, M1 and M2
can not be turned ON and the pack is unchargeable. This is
useful for preventing the charging of shorted cells, while re-
viving packs that have become deeply discharged during ex-
tended storage.
R’s and C’s
For the
resistors and capacitors
used in the application cir-
cuit, Table 1 will give the acceptable value range and the ef-
fected parameters. The function of each of these compo-
nents is described in the “Application Circuit” section.
TABLE 1. Component Acceptable Value Range and Effected Parameters
Component
R1
R2
R3, R4
R5
R6
C1
C2
C3
C4
Acceptable Value Range
100 k
–1 M
1 M
50
–500
100 k
–1 M
100 k
–1 M
0.01 μF–0.1 μF
0.01 μF–0.1 μF
0.01 μF–0.1 μF
220 pF–1 nF
Parameters Effected
Tolerated magnitude of invalid charger
I
SUPPLY
vs. MOSFET turnoff delay
Current limit in extreme over voltage condition vs. IR drop of I
SUPPLY
Current limit in pack ESD event vs. IR drop of I
ENABLE
I
OL
vs. V
OH
of Full signal
Depends on frequency of noise loading the pack
Depends on impedance spectrum of Cells
Depends on MOSFET/Cell behavior during pack short circuit
Equally effective during pack short circuit
www.national.com
12
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LM3641M 制造商:NSC 制造商全稱(chēng):National Semiconductor 功能描述:Lithium-Ion Battery Pack Protection Circuit
LM3642TLE/NOPB 功能描述:LED顯示驅(qū)動(dòng)器 1.5A Sync Boost LED Flash Dvr RoHS:否 制造商:Micrel 數(shù)位數(shù)量:5 片段數(shù)量: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PLCC-44 工作電源電壓:4.75 V to 11 V 最大電源電流:10 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝:Tube
LM3642TLE-LT/NOPB 制造商:Texas Instruments 功能描述:IC LED FLASH DVR BOOST 9DSBGA 制造商:Texas Instruments 功能描述:LED Lighting Drivers 1.5A Sync Boost LED Flsh Drvr 制造商:Texas Instruments 功能描述:LIGHTING DISPLAY IC
LM3642TLX/NOPB 功能描述:LED顯示驅(qū)動(dòng)器 1.5A Sync Boost LED Flash Dvr RoHS:否 制造商:Micrel 數(shù)位數(shù)量:5 片段數(shù)量: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PLCC-44 工作電源電壓:4.75 V to 11 V 最大電源電流:10 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝:Tube
LM3642TLX-LT/NOPB 制造商:Texas Instruments 功能描述:IC LED FLASH DVR BOOST 9DSBGA 制造商:Texas Instruments 功能描述:LED Lighting Drivers 1.5A Sync Boost LED Flsh Drvr 制造商:Texas Instruments 功能描述:LIGHTING DISPLAY IC
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