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參數(shù)資料
| 型號(hào)： | LM385 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Micropower Voltage Reference Diodes(微功耗電壓基準(zhǔn)) |
| 中文描述： | 微功耗電壓基準(zhǔn)二極管（微功耗電壓基準(zhǔn)） |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | LM385 |
LM285, LM385B
http://onsemi.com
2
MAXIMUM RATINGS
(T
A
= 25
°
C, unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Current
I
R
30
mA
Forward Current
I
F
10
mA
Operating Ambient Temperature Range
LM285
LM385
T
A
40 to +85
0 to +70
°
C
Operating Junction Temperature
T
J
+150
°
C
Storage Temperature Range
T
stg
65 to + 150
°
C
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
ESD
4000
400
2000
V
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C, unless otherwise noted)
Characteristic
Symbol
LM2851.2
LM3851.2
/
LM385B1.2
Unit
Min
Typ
Max
Min
Typ
Max
Reverse Breakdown Voltage (I
Rmin
LM2851.2/LM385B1.2
T
A
= T
low
to T
high
(Note 1)
LM3851.2
T
A
= T
low
to T
high
(Note 1)
I
R
20 mA)
V
(BR)R
1.223
1.200
1.235
1.247
1.270
1.223
1.210
1.205
1.192
1.235
1.235
1.247
1.260
1.260
1.273
V
Minimum Operating Current
T
A
= 25
°
C
T
A
= T
low
to T
high
(Note 1)
I
Rmin
8.0
10
20
8.0
15
20
A
Reverse Breakdown Voltage Change with Current
I
Rmin
I
R
1.0 mA, T
A
= +25
°
C
T
A
= T
low
to T
high
(Note 1)
1.0 mA
I
R
20 mA, T
A
= +25
°
C
T
A
= T
low
to T
high
(Note 1)
V
(BR)R
1.0
1.5
10
20
1.0
1.5
20
25
mV
Reverse Dynamic Impedance
I
R
= 100 A, T
A
= +25
°
C
Z
0.6
0.6
Average Temperature Coefficient
10 A
I
R
20 mA, T
A
= T
low
to T
high
(Note 1)
V
(BR)
/ T
80
80
ppm/
°
C
Wideband Noise (RMS)
I
R
= 100 A, 10 Hz
f
10 kHz
n
60
60
V
Long Term Stability
I
R
= 100 A, T
A
= +25
°
C
±
0.1
°
C
S
20
20
ppm/kHR
Reverse Breakdown Voltage (I
Rmin
LM2852.5/LM385B2.5
T
A
= T
low
to T
high
(Note 1)
LM3852.5
T
A
= T
low
to T
high
(Note 1)
I
R
20 mA)
V
(BR)R
2.462
2.415
2.5
2.538
2.585
2.462
2.436
2.425
2.400
2.5
2.5
2.538
2.564
2.575
2.600
V
Minimum Operating Current
T
A
= 25
°
C
T
A
= T
low
to T
high
(Note 1)
= 40
°
C for LM2851.2, LM2852.5
T
high
= +85
°
C for LM2851.2, LM2852.5
T
low
= 0
°
C for LM3851.2, LM385B1.2, LM3852.5, LM385B2.5
T
high
= +70
°
C for LM3851.2, LM385B1.2, LM3852.5, LM385B2.5
I
Rmin
13
20
30
13
20
30
A
1. T
low
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LM386M-1 | Low Voltage Audio Power Amplifier(Low Voltage Audio Power Amplifier) |
| LM386CD | Analog IC |
| LM386CS | Analog IC |
| LM386D | Amplifier. Other |
| LM386G | Single Audio Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM385-1.2 | 制造商:NSC 制造商全稱(chēng):National Semiconductor 功能描述:Micropower Voltage Reference Diode |
| LM385-1.2D | 制造商:TI 制造商全稱(chēng):Texas Instruments 功能描述:MICROPOWER VOLTAGE REFERENCES |
| LM385-1.2DM | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Voltage Reference - Micropower |
| LM385-1.2LP | 制造商:TI 制造商全稱(chēng):Texas Instruments 功能描述:MICROPOWER VOLTAGE REFERENCES |
| LM385-1.2-N | 制造商:TI 制造商全稱(chēng):Texas Instruments 功能描述:LM185-1.2-N/LM285-1.2-N/LM385-1.2-N Micropower Voltage Reference Diode |
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