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參數(shù)資料
| 型號(hào)： | LMBD2837LT1G |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | Monolithic Dual Switching Diodes |
| 中文描述： | 單片雙開關(guān)二極管 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 117K |
| 代理商： | LMBD2837LT1G |
LESHAN RADIO COMPANY, LTD.
G21–2/3
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (I
F
) of 10mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10mA.
Notes:
3. t
p
t
rr
Figure 1. Recovery Time Equivalent Test Circuit
+10 V
2.0 k
820
100
μ
H
0.1
μ
F
DUT
0.1
μ
F
50
OUTPUT
PULSE
GENERATOR
t
r
50
INPUT
SAMPLING
OSCILLOSCOPE
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
INPUT SIGNAL
I
F
V
R
LMBD2837LT1 LMBD2838LT1
I
F
,
I
R
,
μ
A
10
1.0
0.1
0.01
0.001
0
10
20
30
40
50
100
10
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
T
A
=125°C
T
A
=150°C
T
A
=85°C
T
A
=55°C
T
A
=25°C
1.0
0.9
0.8
0.7
0.6
0
2.0
4.0
6.0
8.0
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
C
D
,
CURVES APPLICABLE TO EACH CATHODE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LMBD2838LT1 | Monolithic Dual Switching Diodes |
| LMBD2838LT1G | Monolithic Dual Switching Diodes |
| LMBD3004SLT3G | HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE |
| LMBD3004SLT1G | HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE |
| LMBD301LT1 | Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LMBD2838LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Monolithic Dual Switching Diodes |
| LMBD2838LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Monolithic Dual Switching Diodes |
| LMBD3004SLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE |
| LMBD3004SLT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE |
| LMBD301LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
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