參數(shù)資料
型號(hào): LMBD301LT1
廠商: 樂(lè)山無(wú)線電股份有限公司
英文描述: Silicon Hot-Carrier Diodes Schottky Barrier Diodes
中文描述: 硅熱載流子二極管肖特基二極管
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 89K
代理商: LMBD301LT1
LESHAN RADIO COMPANY, LTD.
LMBD301LT1–1/3
MAXIMUM RATINGS(T
J
=125
°C unless otherwise noted
)
LBD301
LMBD301LT1
value
30
Rating
symbol
V
R
P
F
unit
Volts
Reverse Voltage
Forward Power Dissipation
@TA=25 °C
Derate above 25 °C
Operating Junction
Temperature Range
Storage Temperature Range
DEVICE MARKING
LMBD301LT1=4T
ELECTRICAL CHARACTERISTICS(T
A
=25 °C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage(I
R
=10
μ
A)
Total Capacitance(V
R
=15V,f=1.0MHz,)Figure1
Reverse Leakage(V
R
=25V)Figure3
Forward Voltage(IF=1.0mAdc)Figure4
Forward Voltage(IF=10mAdc)Figure4
280
2.8
200
2.0
mW
mW/ °C
°C
T
J
–55 to +125
–55 to +150
T
stg
°C
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
Min
30
Typ
0.9
13
0.38
0.52
Max
1.5
200
0.45
0.6
Unit
Volts
pF
n
Adc
Vdc
Vdc
NOTE:LMBD301LT1
is also available in bulk packaging.Use
LMBD301L
as the device title to order this device in bulk.
Silicon Hot–Carrier Diodes
Schottky Barrier Diodes
3
CATHODE
1
ANODE
These devices are designed primarily for high–efficiency UHF and VHF detector
applications.They are readily adaptable to many other fast switching RF and digital
applications.They are supplied in an inexpensive plastic package for low–cost,
high–volume consumer and industrial/commercial requirements.They are also
available in a Surface Mount package.
EXtremely Low Minority Carrier Lifetime –15ps(Typ)
Very Low Capacitance –1.5pF(Max)@V
R
=15V
Low Reverse Leakage –IR=13 nAdc(Typ) LMBD301
1
3
2
SOT–23
LMBD301LT1
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