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參數(shù)資料
| 型號： | LMBD301LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
| 中文描述： | 硅熱載流子二極管肖特基二極管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 89K |
| 代理商： | LMBD301LT1 |
LESHAN RADIO COMPANY, LTD.
LMBD301LT1–2/3
LMBD301LT1
I
F
,
I
R
,
μ
A
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
3.0
6.0
9.0
12
15
18
21
24
27
30
500
400
300
200
100
0
0
10
20
30
40
50
60
70
80
90
100
10
1.0
0.1
0.01
0.001
0
6.0
12
18
24
30
100
10
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
TYPICAL ELECTRICAL CHARACTERISTICS
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
I
F
, FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
C
T
,
τ
,
f =1.0MHz
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
KRAKAUER METHOD
T
A
= 100°C
75°C
25°C
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
SAMPLING
OSCILLOSCOPE
(50
INPUT)
PADS
CAPACITIVE
CONDUCTION
FORWARD
CONDUCTION
STORAGE
CONDUCTION
DUT
I
F(PEAK)
I
R(PEAK)
Figure 5. Krakauer Method of Measuring Lifetime
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PDF描述 |
|---|---|
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| LMBD7000LT1G | Dual Switching Diode |
| LMBD914LT1 | High-Speed Switching DIODE |
| LMBD914LT1G | High-Speed Switching DIODE |
| LMBF170LT1 | N-CHANNEL POWER MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LMBD301LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
| LMBD301LT1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Silicon Hota??Carrier Diodes Schottky Barrier Diodes |
| LMBD301LT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Silicon Hota??Carrier Diodes Schottky Barrier Diodes |
| LMBD6050LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Switching Diode |
| LMBD6100LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Monolithic Dual Switching Diode |
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