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參數(shù)資料
| 型號(hào)： | LMBF170LT1G |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | N-CHANNEL POWER MOSFET |
| 中文描述： | N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 108K |
| 代理商： | LMBF170LT1G |
LESHANRADIOCOMPANY,LTD.
LMBF170LT1–2/4
ELECTRICAL CHARACTERISTICS
(Ta = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 A)
Gate–Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0)
ON CHARACTERISTICS
(Note 2.)
V(BR)DSS
IGSS
60
–
Vdc
–
10
nAdc
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 200 mA)
On–State Drain Current (VDS = 25 Vdc, VGS = 0)
DYNAMIC CHARACTERISTICS
VGS(th)
rDS(on)
ID(off)
0.8
3.0
Vdc
–
5.0
–
0.5
A
Input Capacitance
(VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
(Note 2.)
Ciss
–
60
pF
Turn–On Delay Time
(VDD = 25 Vdc, ID = 500 mA, Rgen = 50 )
Figure 1
td(on)
td(off)
–
10
ns
Turn–Off Delay Time
–
10
2. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
Figure 1. Switching Test Circuit
Figure 2. Switching Waveform
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LMBF170LT1
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