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參數(shù)資料
| 型號(hào)： | LMBT2907ALT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistor |
| 中文描述： | 通用晶體管 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 219K |
| 代理商： | LMBT2907ALT1 |
LESHAN RADIO COMPANY, LTD.
LO8–4/5
LMBT2907LT1 LMBT2907ALT1
C
eb
TYPICAL SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 2
5°
C
N
f=1.0 kHz
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
I
C
= –1.0 mA, R
S
= 430
–500
μ
A, R
S
= 560
–50
μ
A, R
S
= 2.7 k
–100
μ
A, R
S
= 1.6 k
f, FREQUENCY (kHz)
Figure 7. Frequency Effects
R
S
, SOURCE RESISTANCE (
)
Figure 8. Source Resistance Effects
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Current–Gain — Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
T
J
= 25°C
f
T
,
P
C
R
θ
VB
for V
BE
I
= –50
μ
A
–100
μ
A
–500
μ
A
–1.0 mA
R
S
=OPTIMUM SOURCE RESISTANCE
–0.1
–0.2 –0.3
–0.5
–1.0
–2.0 –3.0
–5.0
–10
–20 –30
–1.0
–2.0
–5.0
–10
–20
–50
–100 –200
–500 –1000
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10
–20
–50 –100 –200
–500
+0.5
0
–0.5
– 1.0
–1.5
–2.0
–2.5
0.01 0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
10
8.0
6.0
4.0
2.0
0
10
8.0
6.0
4.0
2.0
0
N
C
cb
30
20
10
7.0
5.0
3.0
2.0
C
400
300
200
100
80
60
40
30
20
V
CE
=–20 V
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= –10 V
R
θ
VC
for V
CE(sat)
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10
–20
–50 –100 –200
–500
–1.0
–0.8
–0.6
– 0.4
–0.2
0
V
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