參數(shù)資料
型號(hào): LMBT3904DW1T1
廠商: 樂(lè)山無(wú)線電股份有限公司
英文描述: Dual General Purpose Transistor
中文描述: 雙通用晶體管
文件頁(yè)數(shù): 1/7頁(yè)
文件大小: 202K
代理商: LMBT3904DW1T1
LESHAN RADIO COMPANY, LTD.
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SOT-363
LMBT3904DW1T1
Device
Package
Shipping
ORDERING INFORMATION
L
MBT3904DW1T
1
SOT–363
3000 Units/Reel
The
L
MBT3904DW1T1 device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low–power surface mount
applications where board space is at a premium.
hFE, 100–300
Low VCE(sat),
0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
Device Marking:
L
MBT3904DW1T1 = MA
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
40
Vdc
Collector–Base Voltage
V
CBO
60
Vdc
Emitter–Base Voltage
V
EBO
6.0
Vdc
Collector Current – Continuous
I
C
200
mAdc
Electrostatic Discharge
ESD
HBM>16000,
MM>2000
V
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Package Dissipation(1)
TA = 25
°
C
P
D
150
mW
Thermal Resistance Junction to
Ambient
R
JA
833
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
–55 to +150
°
C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1.
recommended footprint.
Rating
MAXIMUM RATINGS
Dual General Purpose
Transistor
LMBT3904DW1T1-1/7
Q
1
Q
2
(1)
(2)
(3)
(4)
(5)
(6)
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