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參數(shù)資料
| 型號： | LMBT3904TT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors |
| 中文描述： | 通用晶體管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 169K |
| 代理商： | LMBT3904TT1 |
LESHAN RADIO COMPANY, LTD.
LMBT3904
T
T1-1/7
1
3
2
LMBT3904TT1
2
EMITTER
3
COLLECTOR
1
BASE
SC-89
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
40
Vdc
Collector–Base Voltage
V
CBO
60
Vdc
Emitter–Base Voltage
V
EBO
6.0
Vdc
Collector Current — Continuous
I
C
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
P
D
Max
200
Unit
mW
Total Device Dissipation FR– 4 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
FR-4 Board(2), T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1.6
600
300
mW/°C
°C/W
mW
R
θ
JA
P
D
2.4
400
mW/°C
°C/W
°C
R
θ
JA
T
J
, T
stg
–55 to +150
DEVICE MARKING
LMBT3904TT1 = AM
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I
C
= 1.0 mAdc)
Collector–Base Breakdown Voltage
(I
C
= 10
μ
Adc)
Emitter–Base Breakdown Voltage
(I
E
= 10
μ
Adc)
Base Cutoff Current
( V
CE
= 30 Vdc, V
EB
= 3.0 Vdc, )
Collector Cutoff Current
( V
CE
= 30Vdc, V
BE
= 3.0Vdc )
1. FR-4 Minimum Pad.
2. FR-4 1.0 x 1.0 Inch Pad.
3. Pulse Test: Pulse Width
<
300
μ
s, Duty Cycle
<
2.0%.
V
(BR)CEO
40
—
Vdc
V
(BR)CBO
60
—
Vdc
V
(BR)EBO
6.0
—
Vdc
I
BL
—
50
nAdc
I
CEX
—
50
nAdc
FEATURE
Simplifies Circuit Design.
This is a Pb-Free Device.
ORDERING INFORMATION
Device
Package
Shipping
LMBT3904TT1
SC-89
3000/Tape&Reel
General Purpose Transistors
NPN
Silicon
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| LMBT3904TT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors |
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| LMBT3906DW1T1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual Bias Resistor Transistor |
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