參數(shù)資料
型號(hào): LMBT3906DW1T1G
廠商: 樂山無線電股份有限公司
英文描述: Dual Bias Resistor Transistor
中文描述: 雙偏置電阻晶體管
文件頁數(shù): 1/8頁
文件大小: 411K
代理商: LMBT3906DW1T1G
LESHAN RADIO COMPANY, LTD.
1
2
3
4
5
6
SOT-363
LMBT3906DW1T1G
Device
Marking
Shipping
ORDERING INFORMATION
L
MBT390
6
DW1T
1G
A2
3000 Units/Reel
The
L
MBT3906DW1T1 device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low–power surface mount
applications where board space is at a premium.
hFE, 100–300
Low VCE(sat),
0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
Device Marking:
L
MBT3906DW1T1G = A2
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
–40
Vdc
Collector–Base Voltage
V
CBO
–40
Vdc
Emitter–Base Voltage
V
EBO
–5.0
Vdc
Collector Current – Continuous
I
C
–200
mAdc
Electrostatic Discharge
ESD
HBM>16000,
MM>2000
V
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Package Dissipation(1)
TA = 25
°
C
P
D
150
mW
Thermal Resistance Junction to
Ambient
R
JA
833
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
–55 to +150
°
C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1.
recommended footprint.
Rating
MAXIMUM RATINGS
Dual Bias Resistor
Transistor
Q
1
Q
2
(1)
(2)
(3)
(4)
(5)
(6)
Featrues
z
We declare that the material of product
1/9
L
MBT390
6
DW1T
1G
A2
10000 Units/Reel
compliance with RoHS requirements.
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