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參數(shù)資料
| 型號： | LMBT3904WT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors |
| 中文描述： | 通用晶體管 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 283K |
| 代理商： | LMBT3904WT1 |
LESHAN RADIO COMPANY, LTD.
LMBT3904/6WT1-2/11
ELECTRICAL CHARACTERISTICS
(T
A
= 2
5°
C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (2)
(I
C
= 1.0 mAdc, I
B
= 0)
(I
C
= –1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
μ
Adc, I
E
= 0)
(I
C
= –10
μ
Adc, I
E
= 0)
Emitter–Base Breakdown Voltage
Symbol
Min
Max
Unit
LMBT3904WT1
LMBT3906WT1
V
(BR)CEO
40
– 40
—
—
Vdc
LMBT3904WT1
LMBT3906WT1
V
(BR)CBO
60
– 40
—
—
Vdc
(I
E
= 10
μ
Adc, I
C
= 0)
LMBT3904WT1
V
(
BR)EBO
6.0
—
Vdc
(I
E
= –10
μ
Adc, I
C
= 0)
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
= –30 Vdc, V
EB
= –3.0 Vdc)
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
= –30 Vdc, V
EB
= –3.0 Vdc)
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width
<
300
μ
s; Duty Cycle
<
2.0%.
LMBT3906WT1
– 5.0
—
LMBT3904WT1
LMBT3906WT1
I
BL
—
—
50
-50
nAdc
LMBT3904WT1
LMBT3906WT1
I
CEX
—
—
50
– 50
nAdc
NPN LMBT3904WT1
PNP LMBT3906WT1
相關PDF資料 |
PDF描述 |
|---|---|
| LMBT3904WT1G | General Purpose Transistors |
| LMBT3906WT1 | General Purpose Transistors |
| LMBT3906WT1G | General Purpose Transistors |
| LMBT3906DW1T1G | Dual Bias Resistor Transistor |
| LMBT3906DW1T1 | Dual Bias Resistor Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LMBT3904WT1G | 制造商: 功能描述:SWITCHING TRANSISTOR SOT23 (LEAD FREE) 制造商:undefined 功能描述:SWITCHING TRANSISTOR SOT23 (LEAD FREE) |
| LMBT3906DW1T1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual Bias Resistor Transistor |
| LMBT3906DW1T1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual Bias Resistor Transistor |
| LMBT3906LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors |
| LMBT3906LT1G | 制造商: 功能描述:TRANSISTOR |
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