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參數(shù)資料
| 型號： | LMBT3906LT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors |
| 中文描述： | 通用晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 147K |
| 代理商： | LMBT3906LT1G |
LESHAN RADIO COMPANY, LTD.
LMBT3906LT1-2/6
LMBT3906LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS (2)
DC Current Gain
(I
C
= –0.1 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –1.0 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –10 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –50 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –100 mAdc, V
CE
= –1.0 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= –10 mAdc, I
B
= –1.0 mAdc)
(I
C
= –50 mAdc, I
B
= –5.0 mAdc)
Base–Emitter Saturation Voltage
(I
C
= –10 mAdc, I
B
= –1.0 mAdc)
(I
C
= –50 mAdc, I
B
= –5.0 mAdc)
Symbol
Min
Max
Unit
h
FE
––
60
80
100
60
30
––
––
300
––
––
V
CE(sat)
Vdc
––
––
– 0.25
– 0.4
V
BE(sat)
Vdc
– 0.65
––
– 0.85
– 0.95
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= –10 mAdc, V
CE
= –20 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= –5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= –0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
Noise Figure
(V
CE
= –5.0Vdc, I
C
= –100
μ
Adc, R
S
=1.0 k
, f =1.0kHz)
f
T
MHz
250
––
C
obo
pF
––
4.5
C
ibo
pF
––
10
h
ie
k
2.0
12
h
re
X 10
–4
0.1
10
h
fe
—
100
400
* h
oe
μ
mhos
3.0
60
NF
dB
––
4.0
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= – 3.0 Vdc, V
BE
= 0.5 Vdc,
t
d
—
35
Rise Time
I
C
= –10 mAdc, I
B1
= –1.0 mAdc)
t
d
—
35
ns
Storage Time
(V
CC
= –3.0 Vdc, I
C
= –10 mAdc,
t
s
—
225
ns
Fall Time
I
B1
= I
B2
= –1.0 mAdc)
t
f
—
75
3. Pulse Test: Pulse Width
<
300
μ
s; Duty Cycle
<
2.0%.
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