參數(shù)資料
型號(hào): LMBT3946DW1T1
廠商: 樂山無(wú)線電股份有限公司
英文描述: Dual General Purpose Transistors
中文描述: 雙通用晶體管
文件頁(yè)數(shù): 1/11頁(yè)
文件大?。?/td> 222K
代理商: LMBT3946DW1T1
LESHAN RADIO COMPANY, LTD.
LMBT3946DW1T1 1/11
1
3
2
LMBT3946DW1T1
SOT
-
363/SC-88
6
4
5
Dual General Purpose
Transistors
The LMBT3946DW1T1 device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low–power surface mount
applications where board space is at a premium.
h
FE
, 100–300
Low V
CE(sat)
, < 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
Device Marking: LMBT3946DW1T1 = 46
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
(NPN)
(PNP)
Collector-Base Voltage
(NPN)
(PNP)
Emitter-Base Voltage
(NPN)
(PNP)
Collector Current-Continuous
(NPN)
(PNP)
Electrostatic Discharge
MM>2000
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation
(1)
T
A
= 25°C
Thermal Resistance Junction
to Ambient
Junction and Storage
Temperature Range
Symbol
V
CEO
Value
Unit
Vdc
40
-40
V
CBO
Vdc
60
-40
V
EBO
Vdc
6.0
-5.0
I
C
mAdc
200
-200
E
SD
HBM>16000,
V
Symbol
P
D
Max
150
Unit
mW
R
θ
JA
833
°C/W
T
J
,T
stg
–55 to +150
°C
LMBT3946DW1T1*
*Q1 PNP
Q2 NPN
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1.
recommended footprint.
ORDERING INFORMATION
Device
Package
LMBT3946DW1T1 SOT-363
Shipping
3000Units/Reel
4
6
5
3
1
2
Q
2
Q
1
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