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參數(shù)資料
| 型號： | LMBT4401LT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistor |
| 中文描述： | 通用晶體管 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 262K |
| 代理商： | LMBT4401LT1G |
LESHAN RADIO COMPANY, LTD.
LMBT4401LT1–4/6
LMBT4401LT1 UNIT 1
LMBT4401LT1 UNIT 2
h
r
,
–
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of
ransistors. To obtain these curves, a high–gain and a low–gain unit were selected from the LMBT4401LT1
lines, and the same units were used to develop the correspondingly numbered curves on each graph.
300
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
h
f
,
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
10
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Input Impedance
h
i
,
)
50
20
10
5.0
2.0
1.0
0.5
I
C
, COLLECTOR CURRENT (mA)
Figure 14. Output Admittance
h
o
,
μ
m
100
50
20
10
5.0
2.0
1.0
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25°C
Bandwidth = 1.0 Hz
N
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
10
LMBT4401LT1 UNIT 1
LMBT4401LT1 UNIT 2
LMBT4401LT1 UNIT 1
LMBT4401LT1 UNIT 2
LMBT4401LT1 UNIT 1
LMBT4401LT1 UNIT 2
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
10
R
S
, SOURCE RESISTANCE (k
)
Figure 10. Source Resistance Effects
N
f = 1.0 kHz
0.010.02 0.05 0.1 0.2
0.5 1.0
2.0
5.0 10
20
50 100
10
8.0
6.0
4.0
2.0
0
500
100 200
500 1.0k 2.0k
5.0k 10k
20k
50k 100k
f , FREQUENCY (kHz)
Figure 9. Frequency Effects
I
C
= 50
μ
A
I
C
= 100
μ
A
I
C
= 500
μ
A
I
C
= 1.0 mA
I
C
= 1.0 mA, R
S
= 150
I
C
= 500
μ
A, R
S
= 200
I
C
= 100
μ
A, R
S
= 2.0 k
I
C
= 50
μ
A, R
S
= 4.0 k
R
S
= OPTIMUM
RS =
SOURCE
RS =
RESISTANCE
10
8.0
6.0
4.0
2.0
0
LMBT4401LT1
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