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參數(shù)資料
| 型號： | LMBT5401LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | High Voltage Transistor |
| 中文描述： | 高壓晶體管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 113K |
| 代理商： | LMBT5401LT1 |
LESHAN RADIO COMPANY, LTD.
LMBT5401LT1–1/5
MAXIMUM RATINGS
Rating
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
– 150
– 160
– 5.0
– 500
Unit
Vdc
Vdc
Vdc
mAdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
High Voltage Transistor
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T
A
=25 °C
Derate above 25°C
Symbol
P
D
Max
225
Unit
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θ
JA
P
D
556
300
°C/W
mW
2.4
417
mW/°C
°C/W
°C
R
θ
JA
T
J
, T
stg
–55 o +150
DEVICE MARKING
LMBT5401LT1=2L
ELECTRICAL CHARACTERISTICS
(T
A
= 2
5°
C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= –100
μ
Adc, I
E
= 0)
Emitter-BAse Breakdown Voltage
(I
E
= –10
μ
Adc,I
C
=0)
Collector Cutoff Current
(V
CB
= –120 Vdc, I
E
= 0)
Symbol
Min
Max
Unit
V
(BR)CEO
Vdc
– 150
—
V
(BR)CBO
Vdc
– 160
—
V
(BR)EBO
Vdc
-5.0
—
I
CES
—
– 50
nAdc
(V
CB
= –120 Vdc, I
E
= 0, T
A
=100 °C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
—
– 50
μ
Adc
1
3
2
SOT– 23
LMBT5401LT1
2
EMITTER
3
COLLECTOR
1
BASE
DEVICE MARKING AND ORDERING INFORMATION
Device
Package
Shipping
LMBT5401LT1 SOT-23 3000/Tape&Reel
LMBT5401LT1G
(Pb-Free)
SOT-23
3000/Tape&Reel
FEATURE
Pb-Free package is available.
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