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| 型號： | LMBT4403LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors (PNP SILICON) |
| 中文描述： | 通用晶體管（民進(jìn)黨硅） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 223K |
| 代理商： | LMBT4403LT1 |
LESHAN RADIO COMPANY, LTD.
O15–2/5
L
MBT4403LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(I
C
= –0.1 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –1.0 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –10 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –150 mAdc, V
CE
= –2.0 Vdc)(3)
(I
C
= –500 mAdc, V
CE
= –2.0 Vdc)(3)
Collector–Emitter Saturation Voltage(3)
(I
C
= –150mAdc, I
B
= –15 mAdc)
(I
C
= –500 mAdc, I
B
= –50 mAdc)
Base–Emitter Saturation Voltage (3)
(I
C
= –150 mAdc, I
B
= –15 mAdc)
(I
C
= –500 mAdc, I
B
= –50 mAdc)
Symbol
Min
Max
Unit
h
FE
––
30
60
100
100
20
––
––
––
300
––
V
CE(sat)
Vdc
––
––
– 0.4
– 0.75
V
BE(sat)
Vdc
– 0.75
––
– 0.95
– 1.3
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= –20mAdc, V
CE
= –10 Vdc, f = 100 MHz)
Collector–Base Capacitance
(V
CB
= –10 Vdc, I
E
= 0, f = 1.0 MHz)
Emitter–Base Capacitance
(V
BE
= –0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
f
T
MHz
200
––
C
cb
pF
––
8.5
C
eb
pF
––
30
h
ie
k
1.5
15
h
re
X 10
–4
0.1
8.0
h
fe
—
60
500
h
oe
μ
mhos
1.0
100
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= – 30 Vdc, V
EB
= –2.0 Vdc,
t
d
—
15
Rise Time
I
C
= –150mAdc, I
B1
= –15 mAdc)
t
d
—
20
ns
Storage Time
(V
CC
= –30 Vdc, I
C
= –150 mAdc,
t
s
—
225
ns
Fall Time
I
B1
= I
B2
= –15 mAdc)
t
f
—
30
Figure 1. Turn–On Time
Scope rise time < 4.0ns
*Total shunt capacitance of test jig connectors, and oscilloscope
1.0 k
– 30 V
200
C
S
*< 10 pF
1.0 k
– 30 V
200
C
S
* < 10 pF
1N916
–16 V
–16 V
< 20 ns
<2.0 ns
+2.0V
+ 14V
Figure 2. Turn–Off Time
1.0 to 100
μ
s,
DUTY CYCLE = 2%
SWITCHING TIME EQUIVALENT TEST CIRCUITS
0
0
1.0 to 100
μ
s,
DUTY CYCLE = 2%
+4.0 V
3. Pulse Test: Pulse Width
<
300
μ
s; Duty Cycle
<
2.0%.
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