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參數(shù)資料
| 型號(hào)： | LMBT5087LT1G |
| 廠商： | 樂山無(wú)線電股份有限公司 |
| 英文描述： | Low Noise Transistor |
| 中文描述： | 低噪聲晶體管 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大小： | 150K |
| 代理商： | LMBT5087LT1G |
LESHAN RADIO COMPANY, LTD.
M17–6/6
T
J
, JUNCTION TEMPERATURE (°C)
Figure 15. Typical Collector Leakage Current
V
CC
= 30 V
I
C
,
10
4
10
3
10
2
10
1
10
0
10
–1
10
–2
–4
–2
0
+20
+40
+60
+80
+100
+120
+140
+160
I
CBO
AND
I
CEX
@ V
BE(off)
= 3.0 V
I
CEO
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by
the model as shown in Figure 16. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 14 was calculated for various
duty cycles.
To find Z
θ
JA(t)
, multiply the value obtained from Figure 14 by
the steady state value R
θ
JA
.
Example:
Dissipating 2.0 watts peak under the following conditions:
t
1
= 1.0 ms, t
2
= 5.0 ms. (D = 0.2)
Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P
(pk)
x R
θ
JA
= 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
L
MBT5087LT1
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