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參數(shù)資料
| 型號(hào)： | LMBT6517LT1 |
| 廠商： | 樂(lè)山無(wú)線(xiàn)電股份有限公司 |
| 英文描述： | High Voltage Transistors |
| 中文描述： | 高壓晶體管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 170K |
| 代理商： | LMBT6517LT1 |
LESHAN RADIO COMPANY, LTD.
LMBT6517–1/6
1
3
2
LMBT6517LT1
SOT–23
High Voltage Transistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
350
Vdc
Collector–Base Voltage
V
CBO
350
Vdc
Emitter–Base Voltage
V
EBO
5.0
Vdc
Base Current
I
B
250
mAdc
Collector Current — Continuous
I
C
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
Unit
mW
1.8
556
300
mW/°C
°C/W
mW
R
θ
JA
P
D
2.4
417
mW/°C
°C/W
°C
R
θ
JA
T
J
, T
stg
–55 to +150
DEVICE MARKING
LMBT6517LT1 = 1Z
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 1.0 mAdc )
Collector–Base Breakdown Voltage
(I
C
= 100
μ
Adc )
Emitter–Base Breakdown Voltage
(I
E
= 10
μ
Adc )
Collector Cutoff Current
( V
CB
= 250Vdc )
Emitter Cutoff Current
( V
EB
= 5.0Vdc )
V
(BR)CEO
350
—
Vdc
V
(BR)CBO
350
—
Vdc
V
(BR)EBO
6.0
—
Vdc
I
CBO
—
50
nAdc
I
EBO
—
50
nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2
EMITTER
COLLECTOR
1
BASE
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