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參數(shù)資料
| 型號(hào)： | LMBT6517LT1 |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | High Voltage Transistors |
| 中文描述： | 高壓晶體管 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 170K |
| 代理商： | LMBT6517LT1 |
LESHAN RADIO COMPANY, LTD.
LMBT6517–2/6
LMBT6517LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10mAdc, V
CE
= 10 Vdc)
(I
C
= 30 mAdc, V
CE
= 10 Vdc)
(I
C
= 50 mAdc, V
CE
= 10 Vdc)
(I
C
= 100 mAdc, V
CE
= 10 Vdc)
Collector–Emitter Saturation Voltage(3)
(I
C
= 10mAdc, I
B
= 1.0mAdc)
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
(I
C
= 30 mAdc, I
B
= 3.0mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
Base – Emitter Saturation Voltage
(I
C
= 10mAdc, I
B
= 1.0mAdc,)
(I
C
= 20mAdc, I
B
= 2.0mAdc,)
(I
C
= 30mAdc, I
B
= 3.0mAdc,)
Base–Emitter On Voltage
(I
C
= 100mAdc, V
CE
= 10Vdc)
Symbol
Min
Max
Unit
h
FE
—
20
30
30
20
15
—
—
200
200
—
V
CE(sat)
Vdc
—
—
—
—
0.30
0.35
0.50
1.0
V
BE(sat)
Vdc
—
—
—
0.75
0.85
0.90
V
BE(on)
—
2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V
CE
= 20 Vdc, I
C
= 10mAdc, f = 20 MHz)
Collector –Base Capacitance
(V
CB
= 20 Vdc, f = 1.0 MHz)
Emitter –Base Capacitance
(V
EB
=0.5 Vdc, f = 1.0 MHz)
3. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2.0%.
f
T
40
200
MHz
C
cb
—
6.0
pF
C
eb
—
80
pF
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| LMBT6517LT1G | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:High Voltage Transistors |
| LMBT6517LT1G_11 | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:High Voltage Transistors NPN Silicon RoHS requirements. |
| LMBT6517LT3G | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:High Voltage Transistors |
| LMBT6520LT1 | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:High Voltage Transistor |
| LMBT6520LT1G | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:High Voltage Transistor |
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