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參數(shù)資料
| 型號： | LMBT6517LT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | High Voltage Transistors |
| 中文描述： | 高壓晶體管 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 414K |
| 代理商： | LMBT6517LT1G |
LESHAN RADIO COMPANY, LTD.
4/6
LMBT6517LT1G
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Turn–On Time
t
R
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Turn–Off Time
Figure 8. Switching Time Test Circuit
t, TIME (ms)
Figure 9. Thermal Response
t
t
d
@ V
BE(off)
= 2.0 V
t
r
V
CE(off)
= 100 V
I
C
/I
B
= 5.0
T
J
= 25°C
V
CE(off)
= 100 V
I
C
/I
B
= 5.0
I
B1
= I
B2
T
J
= 25°C
t
s
t
f
+10.8 V
–9.2 V
+V CC
50
SAMPLING SCOPE
1/2MSD7000
V
CC
ADJUSTED
FOR V
CE(off)
= 100 V
APPROXIMATELY
–1.35 V
(ADJUST FOR V
(BE)off
= 2.0 V)
PULSE WIDTH
100 ms
t
r
, t
f
<
5.0 ns
DUTY CYCLE
<
1.0%
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
D = 0.5
SINGLE PULSE
Z
qJC(t)
= r(t) R
qJC
T
J(pk)
– T
C
= P
(pk)
Z
qJC(t)
Z
qJA(t)
= r(t) R
qJA
T
J(pk)
– T
A
= P
(pk)
Z
qJA(t)
0.05
0.1
SINGLE PULSE
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
1.0k
700
500
300
200
100
70
50
30
20
10
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
10k
7.0k
5.0k
3.0k
2.0k
1.0k
700
500
300
200
100
50
2.2 k
20 k
1.0 k
~
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LMBT6517LT1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Transistors NPN Silicon RoHS requirements. |
| LMBT6517LT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Transistors |
| LMBT6520LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Transistor |
| LMBT6520LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Transistor |
| LMBT6520LT1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Transistor PNP Silicon RoHS requirements. |
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