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參數(shù)資料
| 型號： | LMBT6520LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | High Voltage Transistor |
| 中文描述： | 高壓晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 171K |
| 代理商： | LMBT6520LT1 |
LESHAN RADIO COMPANY, LTD.
LMBT6520–2/6
LMBT6520LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(I
C
= –1.0 mAdc, V
CE
= –10 Vdc)
(I
C
= –10mAdc, V
CE
= –10 Vdc)
(I
C
= –30 mAdc, V
CE
= –10 Vdc)
(I
C
= –50 mAdc, V
CE
= –10 Vdc)
(I
C
= –100 mAdc, V
CE
= –10 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= –10mAdc, I
B
= –1.0mAdc)
(I
C
= –20 mAdc, I
B
= –2.0 mAdc)
(I
C
= –30 mAdc, I
B
= –3.0mAdc)
(I
C
= –50 mAdc, I
B
= –5.0 mAdc)
Base – Emitter Saturation Voltage
(I
C
= –10mAdc, I
B
= –1.0mAdc,)
(I
C
= –20mAdc, I
B
= –2.0mAdc,)
(I
C
= –30mAdc, I
B
= –3.0mAdc,)
Base–Emitter On Voltage
(I
C
= –100mAdc, V
CE
= –10V )
Symbol
Min
Max
Unit
h
FE
—
20
30
30
20
15
—
—
200
200
—
V
CE(sat)
Vdc
—
—
—
—
–0.30
–0.35
–0.50
–1.0
V
BE(sat)
Vdc
—
—
—
–0.75
–0.85
–0.90
V
BE(on)
—
–2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V
CE
= –20 V, I
C
= –10mA, f = 20 MHz)
Collector –Base Capacitance
(V
CB
= –20 V, f = 1.0 MHz)
Emitter –Base Capacitance
(V
EB
= –0.5 V, f = 1.0 MHz)
f
T
40
200
MHz
C
cb
—
6.0
pF
C
eb
—
100
pF
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PDF描述 |
|---|---|
| LMBTA05LT1 | Driver Transistors |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LMBT6520LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Transistor |
| LMBT6520LT1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Transistor PNP Silicon RoHS requirements. |
| LMBT6520LT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Transistor PNP Silicon RoHS requirements. |
| LMBT918LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:VHF / UFH Transistor |
| LMBT918LT1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:VHF / UFH Transistor NPN Silicon RoHS requirements. |
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