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參數(shù)資料
| 型號： | LMBT6520LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | High Voltage Transistor |
| 中文描述： | 高壓晶體管 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 171K |
| 代理商： | LMBT6520LT1 |
LESHAN RADIO COMPANY, LTD.
LMBT6520–3/6
T
J
= 125°C
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
f
T
,
P
V
C
t
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Turn–On Time
I
C
, COLLECTOR CURRENT (mA)
Figure 2. Current–Gain — Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficients
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
R
θ
V
,
(
h
F
,
25°C
–55°C
T
J
= 25°C
V
CE
= 20 V
f = 20 MHz
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
V
CE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 5.0
R
θ
VC
for V
CE(sat)
R
θ
VB
for V
BE
25°C to 125°C
–55°C to 25°C
–55°C to 125°C
I
C
I
B
= 10
T
J
= 25°C
C
cb
C
eb
t
d
@ V
BE(off)
= 2.0 V
V
CE(off)
= 100 V
I
C
/I
B
= 5.0
T
J
= 25°C
t
r
V
CE
= 10 V
1.0
2.0
3.0
5.0
7.0 10
20
30
50
70 100
200
100
70
50
30
20
10
100
70
50
30
20
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2.5
2.0
1.5
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
1.0
2.0
3.0
5.0
7.0 10
20
30
50
70 100
1.0
2.0
3.0
5.0
7.0 10
20
30
50
70 100
1.0
2.0
3.0
5.0
7.0 10
20
30
50
70 100
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
1.0
2.0
3.0
5.0
7.0 10
20
30
50
70 100
1.0k
700
500
300
200
100
70
50
30
20
10
LMBT6520LT1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LMBT6520LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Transistor |
| LMBT6520LT1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Transistor PNP Silicon RoHS requirements. |
| LMBT6520LT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Transistor PNP Silicon RoHS requirements. |
| LMBT918LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:VHF / UFH Transistor |
| LMBT918LT1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:VHF / UFH Transistor NPN Silicon RoHS requirements. |
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