參數(shù)資料
型號： LMMUN2111LT3
廠商： 樂山無線電股份有限公司
英文描述： Bias Resistor Transistors
中文描述： 偏置電阻晶體管
文件頁數(shù)： 7/8頁
文件大?。?/td> 233K
代理商： LMMUN2111LT3
LESHAN RADIO COMPANY, LTD.
LMUN2111–7/8
LMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
L
MUN2114LT1
35
Vin, INPUT VOLTAGE (VOLTS)
10
1
0.10
10
20
30
40
50
100
10
10
2
4
6
8
10
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00
2
4
6
8
10
15
20
25
30
40
45
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
V
I
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
0
20
40
60
80
VC
Figure 18. DC Current Gain
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
C
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
f = 1 MHz
lE = 0 V
TA = 25
°
C
LOAD
+12 V
Figure 22. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
TA=-25
°
C
75
°
C
25
°
C
TA=75
°
C
25
°
C
-25
°
C
VO = 5 V
VO = 0.2 V
TA=-25
°
C
25
°
C
75
°
C
IC/IB=10
h
1
10
100
IC, COLLECTOR CURRENT (mA)
-25
°
C
25
°
C
TA=75
°
C
VCE = 10 V
180
160
140
120
100
80
60
40
20
0
2
4
6
8
15
20 40 50
60 70
80
90
相關(guān)PDF資料
PDF描述
LMUN2110LT1 Bias Resistor Transistors
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