參數(shù)資料
型號： LMX3162VBH
廠商： NATIONAL SEMICONDUCTOR CORP
元件分類： 通信及網(wǎng)絡(luò)
英文描述： Single Chip Radio Transceiver
中文描述： SPECIALTY TELECOM CIRCUIT, PQFP48
封裝： 7 X 7 MM, PLASTIC, QFP-48
文件頁數(shù)： 8/18頁
文件大?。?/td> 399K
代理商： LMX3162VBH
Electrical Characteristics
(Continued)
The following specifications are guaranteed for V
CC
= 3.6V and T
A
= 25C, unless otherwise specified.
Symbol
Parameter
RSSI
(Note 11)
RSSI
out
Output Voltage
Conditions
Min
Typ
Max
Unit
f
IN
= 110 MHz
P
IN
=80 dBm
@
IF
IN
input pin
P
IN
=20 dBm
@
IF
IN
input pin
P
IN
= 85 to 25 dBm
@
IF
IN
input pin
P
IN
min= 90 dBm
@
IF
IN
input pin
0.12
0.9
10
—
0.2
1.2
18
60
0.6
—
25
—
V
V
Slope
Dynamic Range
mV/dB
dB
RSSI
DC COMPENSATION CIRCUIT
V
OS
Input Offset Voltage
V
I/O
Input/Output Voltage Swing
R
SH
Sample and Hold Resistor
FREQUENCY SYNTHESIZER
f
IN
Input Frequency Range
P
IN
Input Signal Level
f
OSC
Oscillator Frequency Range
V
OSC
Oscillator Sensitivity
I
Do-source
Charge Pump Output Current
6
—
2000
—
1.0
3000
+6
—
3600
mV
V
PP
Centered at 1.5V
(Note 9)
Z
IN
=200
(Note 15)
(Note 12)
(Note 12)
V
do
= V
P
/2, I
cpo
= LOW
(Note 14)
V
do
= V
P
/2, I
cpo
= LOW
(Note 14)
V
do
= V
P
/2, I
cpo
= HIGH
(Note 14)
V
do
= V
P
/2, I
CPO
= HIGH
(Note 14)
0.5
≤
V
do
≤
V
p
0.5
T
A
= 25C
f
IN
= 1225 MHz, f
OUT
= 2.45 GHz
(Note 13)
P
IN
= 11.5 dBm, f
OUT
= 2.45 GHz
P
IN
= 11.5 dBm, f
OUT
= 1225 MHz
P
IN
= 11.5 dBm, f
OUT
= 3.675 GHz
1100
—
5
0.5
—
—
1300
—
20
—
—
MHz
dBm
MHz
V
pp
mA
11.5
—
1.0
1.5
I
Do-sink
—
1.5
—
mA
I
Do-source
—
6.0
—
mA
I
Do-sink
—
6.0
—
mA
I
Do-Tri
1.0
—
1.0
nA
FREQUENCY DOUBLER
(Note 17)
f
OUT
Output Frequency Range
P
OUT
Output Signal Level
Fundamental Output Power
Harmonic Output Power
VOLTAGE REGULATOR
V
O
Output Voltage
DIGITAL INPUT/OUTPUT PINS
V
IH
High Level Input Voltage
V
IL
Low Level Input Voltage
I
IH
Input Current
V
OH
High Level Output Voltage
V
OL
Low Level Output Voltage
2250
12
—
—
—
7.5
17
30
2500
—
10
15.5
MHz
dBm
dBm
dBm
I
LOAD
= 5 mA
2.55
2.75
2.90
V
2.4
—
10
2.4
—
—
—
—
—
—
—
0.8
10
—
0.4
V
V
μA
V
V
GND
<
V
IN
<
V
CC
I
OH
=0.5 mA
I
OL
=0.5 mA
Note 3:
The mixer section is tested at 2.45 GHz.
Note 4:
The IF section of this device is designed for optimum performance at 110 MHz.
Note 5:
The matching network used on RF
IN
for this measurement consists of a series 3.3 pF capacitance into the pin. The matching circuit used on MIXER
OUT
con-
sists of a series 150 nH inductance and a shunt 15 pF capacitance into the pin.
Note 6:
Noise figure measurements are made with matching networks on RF
IN
and MIXER
OUT
. See (Note 5).
Note 7:
The matching network used on pin IF
IN
for this measurement conists of a series 330 nH inductance and a shunt 2.7 pF capacitance into the pin. The match-
ing network used on pin IF
OUT
consists of a series 120 nH inductance and a shunt 12 pF into the pin..
Note 8:
The discriminator is with the DC level centered at 1.5V. The unloaded Q of the tank is 40.
Note 9:
The frequency synthesizer section is tested at 1.225 GHz.
Note 10:
Nominal refers to zero DC offsets programmed for the discriminator.
Note 11:
It depends on loss of the inter-stage filter. These specifications are for an inter-stage loss of 8 dB.
Note 12:
The frequency synthesizer section is guaranteed by design to operate for OSC
IN
input frequency within 5–20 MHz range and minimum amplitude of
0.5 V
PP
.
Note 13:
The doubler section is tested at 2.45 GHz.
Note 14:
See Function Register Programming Description for Icp
o
description.
L
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