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參數(shù)資料
| 型號： | LNA4801L |
| 廠商： | PANASONIC CORP |
| 元件分類： | 紅外LED |
| 英文描述： | GaAlAs Infrared Light Emitting Diode |
| 中文描述： | 3 mm, 1 ELEMENT, INFRARED LED, 860 nm |
| 封裝： | PLASTIC, LLXLTMX02SS06, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 34K |
| 代理商： | LNA4801L |
1
Infrared Light Emitting Diodes
LNA4801L
GaAlAs Infrared Light Emitting Diode
3.0
±
0.2
3.8
±
0.2
2-0.8 max.
2-0.5
±
0.1
0.5
±
0.1
2.54
5
±
0
1
1
±
1
4
±
0
0
1
(
1
2
N
1: Anode
2: Cathode
Unit : mm
For optical control systems
Features
Fast response and high-speed modulation capability :
f
C
= 20 MHz (typ.)
Wide directivity :
θ
= 22 deg. (typ.)
Transparent epoxy resin package
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
190
100
1
3
–25 to +85
–30 to +100
Unit
mW
mA
A
V
C
C
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
f = 100Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
e
λ
P
λ
V
F
I
R
θ
f
C*
Conditions
min
12
typ
max
Unit
mW/sr
nm
nm
V
μ
A
deg.
MHz
Center radiant intensity
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Half-power angle
Cutoff frequency
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 100mA
V
R
= 3V
860
40
1.6
1.9
10
The angle in which radiant intencity is 50%
I
FP
= 50mA + 10mA
p-p
22
20
*
Frequency when modulation optical power decreases by 3dB from 1MHz
10 log P
O
(f
C
MHz)
= – 3
)
P
O
(1MHz)
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