參數(shù)資料
型號(hào)： LP750SOT89-2
英文描述： LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
中文描述： 低噪聲，高線(xiàn)性包裝的PHEMT器件
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 49K
代理商： LP750SOT89-2
LP750P100
P
ACKAGED
0.5
W
ATT
P
OWER
PHEMT
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filtronicsolidstate.com
Revised:
03/02/01
Email:
sales@filss.com
FEATURES
41 dBm IP3 at 12 GHz
27.5 dBm P-1dB at 12 GHz
10.5 dB Power Gain at 12 GHz
2.5 dB Noise Figure at 12 GHz
60% Power-Added-Efficiency
DESCRIPTION AND APPLICATIONS
The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide
(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an
Electron-Beam direct-write 0.25
μ
m Schottky barrier gate. The recessed “mushroom” gate structure
minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have
been optimized for reliable high-power/low-noise applications. The LP750 also features Si
3
N
4
passivation and is available in die form or in surface-mount packages.
The LP750P100 is designed for medium-power, linear amplification. This device is suitable for
applications in commercial and military environments, and it is appropriate to be used as a medium
power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high
efficiency amplifiers, and WLL systems.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 22 ± 3 °C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Output Power @
1 dB Compression
P
1dB
f = 12GHz; V
DS
= 8V; I
DS
= 50% I
DSS
26.0
27.5
dBm
Power Gain @
1 dB Compression
Maximum Available Gain
Noise Figure
Power-Added Efficiency
G
1dB
f = 12GHz; V
DS
= 8V; I
DS
= 50% I
DSS
9.0
10.5
dB
MAG
NF
η
f = 12GHz; V
DS
= 8V; I
DS
= 50% I
DSS
f = 12GHz; V
DS
= 5V; I
DS
= 33% I
DSS
f = 12GHz; V
DS
= 5V; I
DS
= 50% I
DSS
;
P
OUT
= 25dBm
f = 12GHz; V
DS
= 8V; I
DS
= 50% I
DSS
;
P
OUT
= 10dBm
V
DS
= 2V; V
GS
= 0V
V
DS
= 2V; V
GS
= 0V
V
DS
= 2V; I
DS
= 4mA
I
GD
= 4mA
14.0
2.5
60
dB
dB
%
Output Intercept Point
IP
3
41
dBm
Saturated Drain-Source Current
Transconductance
Pinch-Off Voltage
Gate-Drain Breakdown
Voltage Magnitude
Gate-Source Breakdown
Voltage Magnitude
I
DSS
G
M
V
P
|V
BDGD
|
180
230
-2.0
12
265
mA
mS
V
V
280
-1.2
15
-0.25
|V
BDGS
|
I
GS
= 4mA
12
16
V
Gate-Source Leakage
Current Magnitude
|I
GSL
|
V
GS
= -5V
5
45
μ
A
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