參數(shù)資料
型號: LPC12D27FBD100/301
廠商: NXP Semiconductors
文件頁數(shù): 28/46頁
文件大?。?/td> 0K
描述: MCU 32BIT ARM CORTEX-M0 100-LQFP
標(biāo)準(zhǔn)包裝: 90
系列: LPC1200
核心處理器: ARM? Cortex?-M0
芯體尺寸: 32-位
速度: 45MHz
連通性: I²C,IrDA,SPI,SSP,UART/USART
外圍設(shè)備: 欠壓檢測/復(fù)位,DMA,LCD,POR,PWM,WDT
輸入/輸出數(shù): 40
程序存儲器容量: 128KB(128K x 8)
程序存儲器類型: 閃存
RAM 容量: 8K x 8
電壓 - 電源 (Vcc/Vdd): 3 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 100-LQFP
包裝: 托盤
其它名稱: 568-8372
LPC12D27
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 20 September 2011
34 of 46
NXP Semiconductors
LPC12D27
32-bit ARM Cortex-M0 microcontroller
11.2 Flash memory
[1]
Erase and programming times are valid over the lifetime of the device (minimum 20000 cycles).
[2]
Number of program/erase cycles.
11.3 External clock
[1]
Parameters are valid over operating temperature range unless otherwise specified.
[2]
Typical ratings are not guaranteed. The values listed are at room temperature (25
C), nominal supply
voltages.
Table 12.
Dynamic characteristics: flash memory
Tamb = 40 C to +85 C; VDD(3V3) over specified ranges.
Symbol
Parameter
Conditions
Min
Max
Unit
ter
erase time
for one page (512 byte)
[1] -20
ms
for one sector (4 kB)
162
ms
for all sectors; mass
erase
[1] -20
ms
tprog
programming
time
one word (4 bytes)
[1] -49
s
four sequential words
[1] -194
s
128 bytes (one row of 32
words)
[1] -765
s
Nendu
endurance
[2] 20000
-
cycles
tret
retention time
10
-
years
Table 13.
Dynamic characteristics: external clock
Tamb = 40 C to +85 C; VDD(3V3) over specified ranges.[1]
Symbol
Parameter
Conditions
Min
Max
Unit
fosc
oscillator frequency
1
-
25
MHz
Tcy(clk)
clock cycle time
40
-
1000
ns
tCHCX
clock HIGH time
Tcy(clk) 0.4
--ns
tCLCX
clock LOW time
Tcy(clk) 0.4
--ns
tCLCH
clock rise time
-
5
ns
tCHCL
clock fall time
-
5
ns
Fig 20. External clock timing (with an amplitude of at least Vi(RMS) = 200 mV)
tCHCL
tCLCX
tCHCX
Tcy(clk)
tCLCH
002aaa907
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