參數(shù)資料
型號： LRI512-C40
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： EEPROM
中文描述： EEPROM的
文件頁數(shù)： 47/54頁
文件大?。?/td> 351K
代理商： LRI512-C40
47/54
LRI512
Table 59. AC Characteristics
Note: 1. P
A
Min is the minimum H-field required to communicate with the LRI512
P
A
Max is the maximum H-field that the device can support before clamping the incoming signal
Symbol
Parameter
Test Condition (in addition to
those in Table 57)
Min.
Typ.
Max.
Unit
f
CC
External RF Signal Frequency
13.553
13.56
13.567
MHz
MI
CARRIER
10% Carrier Modulation Index
MI=(A-B)/(A+B)
10
30
%
t
RFR
, t
RFF
10% Rise and Fall time
0
3.0
μs
t
RFSBL
10% Minimum Pulse Width for
bit
7.1
9.44
μs
MI
CARRIER
100% Carrier Modulation Index
MI=(A-B)/(A+B)
95
100
%
t
RFR
, t
RFF
100% Rise and Fall time
0
3.5
μs
t
RFSBL
100% Minimum Pulse Width for
bit
7.1
9.44
μs
t
JIT
Bit pulse Jitter
-2
+2
μs
t
MAX
Maximum Carrier Rise Time
Zero to Maximum field strength
induced Voltage on Coil
3
V/μs
t
MINCD
Minimum Time from Carrier
Generation to First Data
From H-field min
0.1
1
ms
f
SH
Subcarrier Frequency High
F
CC
/32
423.75
kHz
f
SL
Subcarrier Frequency Low
F
CC
/28
484.28
kHz
t
1
Time for LRI512 Response
4224/F
S
313
320.9
322
μs
t
2
Time between Commands
4224/F
S
309
311.5
314
μs
r
L
Resistive Load (for Modulation)
500
1000
2000
P
A
H-field Energy on LRI512
Antenna
A1T/ISOR
0.15
5
A/m
A1S/ISOR
0.15
5
A/m
A2T/ISOK
0.15
5
A/m
C40
1
5
A/m
t
W
Programming Time
5
ms
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