參數(shù)資料
型號: LRS13012
英文描述: SRAM/EEPROM
中文描述: 的SRAM / EEPROM的
文件頁數(shù): 6/43頁
文件大?。?/td> 1326K
代理商: LRS13012
LRS1382
4
Pin
Description
Type
A
0
to A
16
, A
18
F-A
17
,
F-A
19
, F-A
20
S-A
17
F-CE
S-CE
1
, S-CE
2
F-WE
S-WE
F-OE
Address Inputs (Common)
Input
Address Inputs (Flash)
Input
Address Input (SRAM)
Input
Chip Enable Input (Flash)
Input
Chip Enable Inputs (SRAM)
Input
Write Enable Input (Flash)
Write Enable Input (SRAM)
Output Enable Input (Flash)
Input
Input
Input
S-OE
Output Enable Input (SRAM)
SRAM Byte Enable Input (DQ
0
to DQ
7
)
SRAM Byte Enable Input (DQ
8
to DQ
15
)
Reset Power Down Input (Flash)
Block erase and Write : V
IH
Read : V
IH
Reset Power Down : V
IL
Write Protect Input (Flash)
When F-WP is V
IL
, locked-down blocks cannot be unlocked. Erase or
program operation can be executed to the blocks which are not locked and
locked-down. When F-WP is V
IH
, lock-down is disabled.
Ready/Busy Output (Flash)
During an Erase or Write operation : V
OL
Block Erase and Write Suspend : High-Z (High impedance)
Input
S-LB
Input
S-UB
Input
F-RST
Input
F-WP
Input
F-RY/BY
Open Drain
Output
DQ
0
to DQ
15
F-V
CC
S-V
CC
Data Inputs and Outputs (Common)
Input / Output
Power Supply (Flash)
Power
Power Supply (SRAM)
Power
F-V
PP
Monitoring Power Supply Voltage (Flash)
Block Erase and Write : F-V
PP
= V
PPH1/2
All Blocks Locked : F-V
PP
< V
PPLK
GND (Common)
Input
GND
Power
NC
Non Connection
-
T
1
to T
3
Test pins (Should be all open)
-
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