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參數(shù)資料
| 型號： | LS302 |
| 廠商： | Linear Integrated Systems |
| 英文描述： | HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS |
| 中文描述： | 高壓超測試版整裝雙NPN晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 29K |
| 代理商： | LS302 |
Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
1 7
C1
3
BOTTOM VIEW
2
6
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
BV
CBO
BV
CEO
BV
EBO
BV
CCO
h
FE
h
FE
h
FE
V
CE
(SAT)
I
CBO
I
EBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
Narrow Band Noise Figure
LS301
18
18
6.2
100
2000
2000
2000
0.5
100
0.2
2
2
0.5
100
3
LS302
35
35
6.2
100
1000
1000
1000
0.5
100
0.2
2
2
0.5
100
3
LS303
10
10
6.2
100
2000
2000
2000
0.5
100
0.2
2
2
0.5
100
3
UNITS
MIN.
MIN.
MIN.
MIN.
TYP.
MIN.
TYP.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
CONDITIONS
I
C
= 10
μ
A
I
C
= 10
μ
A
I
E
= 10
μ
A I
C
= 0 NOTE 2
I
C
= 10
μ
A
I
C
= 1
μ
A
I
C
= 10
μ
A
I
C
= 500
μ
A
I
C
= 1mA
I
E
= 0
I
E
= 0
I
E
= 0
V
CC
= 0
V
CC
= NOTE 4
I
C
= 200
μ
A
I
C
= 10
μ
A
BW = 200Hz
f = 1KHz
Collector to Base Voltage
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
V
V
V
V
I
E
= 0
I
B
= 0
I
E
= 0
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
I
B
= 0.1mA
V
pA
pA
pF
pF
nA
MHz
dB
V
CB
= NOTE 3
V
EB
= 3V
V
CB
= 1V
V
CE
= 5V
V
CE
= 3V
R
G
= 10 K
FEATURES
VERY HIGH GAIN
LOW OUTPUT CAPACITANCE
TIGHT V
BE
MATCHING
HIGH f
T
h
FE
≥
2000 @ 1.0
μ
A TYP.
C
OBO
≤
2.0pF
|V
BE1
-V
BE2
| = 0.2mV TYP.
100MHz
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25
°
C (unless otherwise noted)
I
C
Collector Current
5mA
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65
°
to +200
°
C
+150
°
C
Maximum Power Dissipation ONE SIDE BOTH SIDES
Device Dissipation @ Free Air
Linear Derating Factor
250mW
2.3mW/
°
C
500mW
4.3mW/
°
C
B1 E1 E2 B2
C1
C2
26 X 29 MILS
E1
E2
C2
B1
B2
LS301 LS302 LS303
HIGH VOLTAGE
SUPER-BETA MONOLITHIC
DUAL NPN TRANSISTORS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LS303 | HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS |
| LS310-3 | MONOLITHIC DUAL NPN TRANSISTORS |
| LS311 | MONOLITHIC DUAL NPN TRANSISTORS |
| LS312 | MONOLITHIC DUAL NPN TRANSISTORS |
| LS313 | MONOLITHIC DUAL NPN TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LS302_PDIP | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL NPN TRANSISTOR |
| LS302_SOIC | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL NPN TRANSISTOR |
| LS302_SOT-23 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL NPN TRANSISTOR |
| LS302_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL NPN TRANSISTOR |
| LS302_TO-78 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL NPN TRANSISTOR |
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