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參數(shù)資料
| 型號(hào)： | LS312 |
| 廠商： | Linear Integrated Systems |
| 英文描述： | MONOLITHIC DUAL NPN TRANSISTORS |
| 中文描述： | 整體式雙NPN晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | LS312 |
Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
1 7
C1
3
5
BOTTOM VIEW
2
6
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL CHARACTERISTICS LS310 LS311 LS312 LS313 UNITS CONDITIONS
BV
CBO
BV
CEO
BV
EBO
BV
CCO
h
FE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
25
25
6.2
30
150
45
45
6.2
100
150
60
60
6.2
100
200
45
45
6.2
100
400
1000 MAX.
400
400
0.25
0.2
0.2
2
2
0.5
200
3
MIN.
MIN.
MIN.
MIN.
MIN.
V
V
V
V
I
C
= 10
μ
A
I
C
= 10
μ
A
I
E
= 10
μ
A
I
C
= 10
μ
A
I
C
= 10
μ
A
I
E
= 0
I
B
= 0
I
C
= 0
I
E
= 0
V
CE
= 5V
NOTE 2
h
FE
h
FE
V
CE
(SAT) Collector Saturation Voltage
I
CBO
I
EBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
Narrow Band Noise Figure
DC Current Gain
DC Current Gain
150
150
0.25
0.2
0.2
2
2
0.5
200
3
150
150
0.25
0.2
0.2
2
2
0.5
200
3
200
200
0.25
0.2
0.2
2
2
0.5
200
3
MIN.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
I
C
= 100
μ
A V
CE
= 5V
I
C
= 1mA
I
C
= 1mA
I
E
= 0
I
E
= 0
I
E
= 0
V
CC
= 0
V
CC
= NOTE 4
I
C
= 1mA
I
C
= 100
μ
A
BW = 200Hz, R
G
= 10 K
f=1KHz
V
CE
= 5V
I
B
= 0.1mA
V
CB
= NOTE 3
V
CB
= 3V
V
CB
= 5V
V
nA
nA
pF
pF
nA
MHz
dB
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
V
CE
= 5V
V
CE
= 5V
FEATURES
VERY HIGH GAIN
TIGHT V
BE
MATCHING
HIGH f
T
h
FE
≥
200 @ 10
μ
A-1mA
|V
BE1
-V
BE2
| = 0.2mV TYP.
250MHz TYP. @ 1mA
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25
°
C (unless otherwise noted)
I
C
Collector Current 10mA
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65
°
to +200
°
C
+150
°
C
Maximum Power Dissipation ONE SIDE BOTH SIDES
Device Dissipation @ Free Air
Linear Derating Factor
250mW
2.3mW/
°
C
500mW
4.3mW/
°
C
B1 E1 E2 B2
C1
C2
26 X 29 MILS
E1
E2
C2
B1
B2
MONOLITHIC DUAL
NPN
TRANSISTORS
LS310 LS311 LS312 LS313
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LS312_P-DIP | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL NPN TRANSISTOR |
| LS312_SOIC | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL NPN TRANSISTOR |
| LS312_SOT-23 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL NPN TRANSISTOR |
| LS312_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL NPN TRANSISTOR |
| LS312_TO-78 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL NPN TRANSISTOR |
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