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參數(shù)資料
| 型號： | LS6511 |
| 廠商： | LSI Corporation |
| 英文描述： | PIR SENSOR INTERFACE |
| 中文描述： | 紅外傳感器接口 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 46K |
| 代理商： | LS6511 |
FIGURE 2. TYPICAL RELAY APPLICATION
R1 = See NOTE 2
R2 = 36k
R3 = 2.7M
R4 = 36k
R5 = 2.7M
C1 = 100μF
C2 = 33μF
C3 = 0.01μF
C4 = 33μF
C5 = 0.01μF
C6 = 0.01μF (Typical)
C7 = 0.22μF (CP Mode; Typical)
C7 = 0.68μF (DPMode; Typical)
C8 = 0.22μF (Typical)
C9 = 0.1μF
D1 = 1N4001
RELAY = No typical P/N
PIR = HEIMANN LHi 958, 968 (Typical)
All Resistors 1/4W.
All Capacitors 10V.
NOTE 2
: R1 is selected to provide sufficient
current to drive the LS6511 and PIR Sensor. Any
surplus current is available to drive additional
loads applied to the 5V Shunt Regulator output or
is absorbed by the 5V Shunt Regulator. Refer to
specifications for current limits.
NOTE 3:
In SP Mode, R7 and C7 are not used
and Pin 5 is tied to Vss.
R6 = 2.2M
(Typical)
R7 = 2.2M
(Typical)
R8 = 2.2M
(Typical)
R9 = 3k
R10 = 2.2k
(Typical)
NOTE 1
: The relay coil is normally energized and the LED is off.
When an alarm occurs, the relay coil becomes de-energized and
the LED is turned on.
AMP 1
OUT
AMP 1
(-)IN
AMP 2
(-)IN
AMP 1
(+)IN
AMP 2
OUT
5V REG
OUT
CP MODE or
DP MODE RC
V
SS
LED/REL
OUT
V
DD
V
DD
C4
R4
C5
R5
1
2
3
4
5
6
7
9
10
11
12
13
14
C2
R2
R9
C9
R1
C1
PIR
SENSOR
R3
C3
LS6511
C6
R6
+
-
+
-
+
-
8
V
DD
C7
R7
V
DD
C8
R8
V
DD
D1
LED/REL
OUT
MODE
DIG FILTER
RC
DUR TIM
RC
RELAY
COIL
RAW
DC
INPUT
R10
LED
S = 3-Position SPDT (On-Off-On)
S
See Note 3
Using the typical application circuit as shown in Figure 2,
the Outputs on Pins 8 and 9 occur on power-up because of
the large settling time in the amplifier stages. In applications
where this is not desireable, the digital filter oscillator must
be disabled on power-up long enough to enable the PIR
amplifiers to stabilize. Replacing the R6-C6 circuit shown in
Figure 2 with the circuit shown in Figure 3 will disable the
digital filter oscillator until the voltage across the 220μF
capacitor reaches a value high enough for the oscillator to
begin oscillating. Component values that can be changed to
speed up stabilization include C2, C3, C4 and C5. C3 and
C5 become 0.001μF and C2 and C4 become 10μF.
FIGURE 3. INHIBITING OUTPUTS UPON POWER TURN-ON
LS6511 - 4
2.2M
.01μF
220μF
100k
V
DD
R6
C6
+
6511-102402-3
NOISE CONSIDERATIONS
Layout of any circuit using a high-gain PIR amplifier is critical.
The PIR amplifier components should be located close to the
amplifier pins on the chip in order to minimize noise pickup.The
oscillator and relay drive components should be located away
from the amplifier components.
Other steps that can help reduce noise is adding a ground
shield backplane to the PCB and enhancing the filtering of
VDD; i.e., adding a 0.1uF high frequency capacitor across C1
and increasing C1 to 220 μF.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LS6511N | 制造商:LSI 制造商全稱:LSI 功能描述:Direct Interface with PIR Sensor |
| LS6512 | 制造商:LSI 制造商全稱:LSI 功能描述:Direct Interface with PIR Sensor |
| LS6513 | 制造商:LSI 制造商全稱:LSI 功能描述:Direct Interface with PIR Sensor |
| LS6525 | 制造商:LSI 制造商全稱:LSI 功能描述:BATTERY POWERED LOW-POWER PIR SENSOR INTERFACE |
| LS6526 | 制造商:LSI 制造商全稱:LSI 功能描述:BATTERY POWERED LOW-POWER PIR SENSOR INTERFACE |
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