參數(shù)資料
型號: LS841
廠商: Linear Integrated Systems
英文描述: LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET
中文描述: 低噪聲低漂移低電容整體式雙N溝道結(jié)型場效應(yīng)管
文件頁數(shù): 2/2頁
文件大小: 32K
代理商: LS841
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
TO-71
Six Lead
0.230
0.209
DIA.
DIA.
0.195
0.175
0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016
DIA.
6 LEADS
3
2
1
8
4
5
6
0.046
0.036
45°
0.048
0.028
0.100
0.050
7
TO-78
0.335
0.370
0.305
0.335
0.016
DIM. A
0.165
0.185
0.040
0.016
0.021
DIM. B
MIN. 0.500
0.200
0.100
0.100
0.028
0.034
45°
1
2
34
5
6
7
8
0.029
0.045
SEATING
PLANE
S1 1
D1
SS
G1
2
3
4
5
6
7
8
S2
G2
SS
D2
P-DIP
S1 1
D1
SS
G1
2
3
4
5
6
7
8
S2
G2
SS
D2
0.150
0.158
(3.81)
(4.01)
0.188
0.197
0.228
0.244
(5.79)
(6.20)
SOIC
0.320
0.290
(8.13)
(7.37)
0.405
(10.29)
MAX.
(4.78)
(5.00)
SYMBOL
CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS
OUTPUT CONDUCTANCE
Full Conduction
--
Operating
--
Differential
--
COMMON MODE REJECTION
-20 log |
V
GS1-2
/
V
DS
|
--
NOISE
Figure
--
Y
OSS
Y
OS
|Y
OS1-2
|
--
0.1
0.01
10
1
0.1
μ
mho
μ
mho
μ
mho
V
DG
= 20V
V
DG
= 20V
V
GS
= 0
I
D
= 200
μ
A
CMR
CMR
--
100
75
--
--
dB
dB
V
DS
= 10 to 20V
V
DS
= 5 to 10V
I
D
= 200
μ
A
I
D
= 200
μ
A
NF
--
0.5
dB
V
DS
= 20V
f= 100Hz
V
DS
= 20V
NBW= 1Hz
V
DS
= 20V
NBW= 1Hz
V
GS
= 0
NBW= 6Hz
I
D
= 200
μ
A f= 1KHz
R
G
= 10M
e
n
Voltage
--
--
10
nV/
Hz
e
n
Voltage
--
--
15
nV/
Hz
I
D
= 200
μ
A f= 10Hz
CAPACITANCE
Input
Reverse Transfer
Drain-to-Drain
C
ISS
C
RSS
C
DD
--
--
--
4
1.2
0.1
10
5
--
pF
pF
pF
V
DS
= 20V
I
D
= 200
μ
A
V
DG
= 20V
I
D
= 200
μ
A
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