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參數(shù)資料
| 型號： | LS845 |
| 廠商： | Linear Integrated Systems |
| 英文描述： | ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| 中文描述： | 超低噪音低漂移整體式雙N溝道結型場效應管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 32K |
| 代理商： | LS845 |
Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
1 7
S1
3
BOTTOM VIEW
2
6
31 X 32 MILS
D1
G1
S2
S1
G2
D2
G1
S2
G2
D1
D2
FEATURES
ULTRA LOW NOISE
e
n
= 3nV/
√
Hz TYP.
I
G
= 15pA TYPs.
|
V
GS1-2
/
T|= 5
μ
V/
°
C max.
IV
GS1-2
I= 1mV max.
LOW LEAKAGE
LOW DRIFT
ULTRA LOW OFFSET VOLTAGE
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25
°
C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65
°
to +150
°
C
+150
°
C
Maximum Voltage and Current for Each Transistor NOTE 1
-V
GSS
-V
DSO
-I
G(f)
Gate Voltage to Drain or Source
Drain to Source Voltage
Gate Forward Current
60V
60V
50mA
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
400mW @ +125
°
C
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
|
V
GS1-2
/
T| max. Drift vs. Temperature
LS843 LS844 LS845 UNITS CONDITIONS
5
10
25
μ
V/
°
C
V
DG
= 10V
T
A
= -55
°
C to +125
°
C
V
DG
= 10V
I
D
= 500
μ
A
|V
GS1-2
| max.
Offset Voltage
1
5
15
mV
I
D
= 500
μ
A
LS843 LS844 LS845
ULTRA LOW NOISE LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
SYMBOL
BV
GSS
BV
GGO
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Conduction
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Operating
High Temperature
Reduced VDG
At Full Conduction
MIN. TYP. MAX. UNITS CONDITIONS
60
--
--
60
--
--
V
V
V
DS
= 0
I
G
= 1nA
I
D
= 1nA
I
D
= 0
I
S
= 0
Y
fss
Y
fs
|Y
fs1-2
/Y
fs
|
1500
1000
--
--
1500
0.6
--
--
3
μ
mho
μ
mho
%
V
DG
= 15V
V
DG
= 15V
V
GS
= 0
I
D
= 500
μ
A
f= 1kHz
I
DSS
|I
DSS1-2
/I
DSS
|
1.5
--
5
1
15
5
mA
%
V
DG
= 15V
V
GS
= 0
V
GS
(off) or V
P
V
GS
1
0.5
--
--
3.5
3.5
V
V
V
DS
= 15V
V
DS
= 15V
I
D
= 1nA
I
D
= 500
μ
A
-I
G
-I
G
-I
G
-I
GSS
--
--
--
--
15
--
5
--
50
50
30
100
pA
nA
pA
pA
V
DG
= 15V
V
DG
= 15V
V
DG
= 3V
V
DG
= 15V
I
D
= 500
μ
A
I
D
= 500
μ
A
I
D
= 500
μ
A
V
DS
= 0
T
A
= +125
°
C
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