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參數(shù)資料
型號: LT1101ISW#TRPBF
廠商: Linear Technology
文件頁數(shù): 13/16頁
文件大?。?/td> 0K
描述: IC PREC INSTRMNT-AMP SNGL 16SOIC
標(biāo)準(zhǔn)包裝: 1,000
放大器類型: 儀表
電路數(shù): 1
轉(zhuǎn)換速率: 0.1 V/µs
增益帶寬積: 37kHz
電流 - 輸入偏壓: 6nA
電壓 - 輸入偏移: 250µV
電流 - 電源: 94µA
電壓 - 電源,單路/雙路(±): 2.2 V ~ 36 V,±1.1 V ~ 18 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 16-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 16-SO
包裝: 帶卷 (TR)
6
LT1101
1101fa
LT1101AM/AI
LT1101M/I
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
GE
Gain Error
G = 100, V0 = 0.1V to 3.5V, RL = 50k
0.026
0.080
0.028
0.120
%
G = 10, VCM = 0.15, RL = 50k
0.011
0.070
0.014
0.100
%
TCGE
Gain Error Drift
RL = 50k (Note 2)
1
4
1
5
ppm/°C
GNL
Gain Nonlinearity
G = 100, RL = 50k
45
110
48
140
ppm
G = 10, RL = 50k (Note 2)
4
13
5
15
ppm
VOS
Input Offset Voltage
90
350
110
500
V
LT1101ISW
110
950
V
VOS/T Input Offset Voltage Drift
(Note 2)
0.4
2.0
0.5
2.8
V/°C
LT1101ISW
0.5
4.8
V/°C
lOS
Input Offset Current
0.16
0.80
0.19
1.30
nA
VOS/T Input Offset Current Drift
(Note 2)
0.5
4.0
0.8
7.0
pA/°C
IB
Input Bias Current
7
10
7
12
nA
IB/T
Input Bias Current Drift
(Note 2)
10
25
10
30
pA/°C
CMRR
Common Mode
G = 100, VCM = 0.1V to 3.2V
91
105
88
104
dB
Rejection Ratio
G = 10, VCM = 0.1V to 2.9V, VREF = 0.15V
80
98
77
97
dB
IS
Supply Current
88
135
92
160
A
V0
Maximum 0utput
Output High, 50k to GND
3.8
4.1
3.8
4.1
V
Voltage Swing
Output High, 2k to GND
3.0
3.7
3.0
3.7
V
Output Low, VREF = 0, No Load
4.5
8
4.5
8
mV
Output Low, VREF = 0, 2k to GND
0.7
1.5
0.7
1.5
mV
Output Low, VREF = 0, ISINK = 100A
125
170
125
170
mV
VS = 5V, 0V, VCM = 0.1V, VREF(PIN 1) = 0.1V, Gain = 10 or 100,
–40°C ≤ TA ≤ 85°C for AI/I grades, unless otherwise noted (Note 4).
ELECTRICAL CHARACTERISTICS
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